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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 1691-1701 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction of disilane, Si2H6, with the Si(100) and Si(111) surfaces has been examined with supersonic molecular beam scattering techniques. The emphasis has been on elucidating the reaction mechanism operative under conditions leading to steady-state Si epitaxial growth. Two reaction mechanisms have been identified: (i) complete pyrolysis to form two adsorbed Si atoms and gas phase hydrogen; and (ii) a reaction forming one adsorbed Si atom, gas phase hydrogen, and silane, SiH4, as a gas phase product. The relative predominance of these two channels is sensitive to surface structure, adlayer composition, and incident kinetic energy. In particular, only complete pyrolysis is observed on the clean Si(100)-(2×1) and Si(111)-"(1×1)'' surfaces. The silane production channel, on the other hand, is observed on the Si(111)-(7×7) surface, and on the Si(100)-(2×1) surface in the presence of a finite coverage of either adsorbed hydrogen or phosphorus atoms. Examination of the reaction dynamics reveals that the probability of complete pyrolysis increases with increasing incident kinetic energy. Angular-resolved measurements of the scattered SiH4(g) product on the Si(111)-(7×7) surface suggest that silane is formed from the reaction of a chemisorbed intermediate. Comparison of the reaction probability of SiH4 and Si2H6 on the Si(111)-(7×7) surface as a function of incident kinetic energy suggests a similar decomposition mechanism for these two molecules, namely, Si–H bond activation. In this scenario, SiH4(g) is formed via unimolecular thermal decomposition of an adsorbed Si2H5(a) species. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 5329-5342 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Recent experimental results concerning reactive scattering in the hyperthermal kinetic energy regime can be described by energy scaling relationships Ei cosn θi, where n〈2, and Ei and θi are the incident kinetic energy and incident angle, respectively. Such power law scaling arguments are empirical, the results of which cannot easily be related to the fundamental parameters that describe the gas–surface interaction. We present a detailed and thorough analysis where the role of surface corrugation in determining the coupling between incident kinetic energy and incident angle in these translationally activated systems is considered explicitly. The key features of the analysis involve the assumption that the kinetic energy directed along the local surface normal (E⊥) controls the reaction probability (SR), and that by averaging this quantity over the unit cell, one obtains the appropriate energy scaling relationship. The major advantage associated with the proposed analysis is that one need not assume a functional form concerning how the reaction probability depends on kinetic energy, i.e., SR(E⊥).Our analysis demonstrates that in the absence of shadowing, a single "universal'' scaling function exists Eiaitch-theta(θi), which is given by the expression aitch-theta(θi)=(1−Δ)cos2 θi+3Δ sin2 θi, where Δ is a corrugation parameter (0≤Δ≤1) and only in-plane corrugation has been considered. Shadowing plays an important role at sufficiently large corrugation amplitudes and/or sufficiently large angles of incidence. Specifically, it leads to more complex scaling functions, which depend on the shape of the surface corrugation, for which several examples have been considered. Both local minima and local maxima can be observed for aitch-theta(θi) as a function of incident angle. Two factors can introduce errors in the analysis, namely, the presence of nonlinearities, and the effects of nonuniform surface reactivity, and illustrative examples are considered. The model accounts well for recent experimental results concerning the dissociation of silanes on silicon surfaces, and alkanes on a corrugated platinum surface. It is probable that other systems involving reactive scattering in the hyperthermal kinetic energy regime may also be described well employing this analysis.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7140-7151 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction probabilities of GeH4 and Ge2H6 on the Ge(100) and Ge(111) surfaces have been measured as a function of substrate temperature, incident kinetic energy, and angle of incidence employing supersonic molecular beam scattering techniques. At sufficiently large incident kinetic energies (Ei(approximately-greater-than)1 eV) both GeH4 and Ge2H6 react by direct dissociative chemisorption on both surfaces examined, with the reaction probability increasing approximately exponentially with increasing (scaled) incident kinetic energy. At moderate kinetic energies (Ei∼0.4 eV), however, Ge2H6 reacts by a precursor-mediated mechanism on Ge(100), as demonstrated by a decrease in the reaction probability with either increasing substrate temperature or incident kinetic energy. Interestingly, under similar conditions, no evidence is found for precursor-mediated adsorption of Ge2H6 on the Ge(111) surface. The reaction of Ge2H6 does not exhibit a GeH4 production channel on either Ge(100) or Ge(111) for the conditions examined here. The results obtained at high incident kinetic energies ((approximately-greater-than)1 eV) are well described by a statistical model based upon a Rice–Ramsperger–Kassel–Marcus (RRKM) framework. The moderate incident kinetic energy results for Ge2H6 on Ge(100) are well described by a model that assumes reaction via a trapping, precursor-mediated mechanism. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3614-3622 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectrometry (LEISS) have been employed to study the kinetics of etching by atomic hydrogen of Ge overlayers on Si(100). The coverage of Ge as deduced by both XPS and LEISS decreases dramatically after exposure to atomic hydrogen, and the decrease is exponential with exposure time. The etch rate of Ge derived from these experiments is found to be a linear function of the flux of atomic hydrogen at sufficiently low temperatures (〈180 °C). The rate of etching also depends upon the substrate temperature and a maximum in the etch rate is observed at about 180 °C. A kinetic model is proposed to describe the experimental data quantitatively. The model successfully describes the variation in the rate of etching as functions of the flux of atomic hydrogen and substrate temperature. In particular, the peak observed in the etch rate as a function of substrate temperature is interpreted as due to a similar variation in the coverage of an important reaction intermediate, namely a GeH2(a) surface species. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4051-4054 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction of Si2H6 with the Si(100) surface has been examined via supersonic molecular beam scattering techniques. It is found that the reaction probability is most sensitive to the incident translational energy, varying nearly linearly with increasing energy for 〈Etr〉(approximately-greater-than)1 eV. The effect of incident angle θi is described by a model that accounts explicitly for surface corrugation and assumes that the reaction probability varies with 〈Etr〉 cos2 θloc, where θloc is the incident angle with respect to the local surface normal.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2202-2204 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen has been examined under ultrahigh vacuum conditions by employing molecular beam techniques and x-ray photoelectron spectroscopy. Ion bombardment leads to a significant enhancement in the rate of oxidation. By modulating both the oxygen and ion (Ar+ ) fluxes several possible mechanisms for the enhanced rate can be eliminated. Of the remaining possibilities, a mechanism involving competition between ion-induced oxygen incorporation and sputtering appears most likely.
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 396-409 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 817-819 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experimental results concerning Ge segregation in Si1−xGex epitaxial thin films deposited on Si(100) substrates using Si2H6 and GeH4 cannot be accounted for by a simple two-site model involving surface and bulk states. This is due to Ge enrichment in the subsurface layers. Here, we demonstrate that a simple model based on the regular solution theory, which invokes both nearest, and next-nearest neighbor interactions, can explain the Ge enrichment in the subsurface. A computer simulation using the Monte Carlo method verifies the assumptions made in the model, and both methods show excellent agreement with the experimental data. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2181-2183 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here a low-temperature (Ts〈630 °C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 25-27 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon thin films were deposited on Si(100) substrates at variable angles of incidence using well-collimated supersonic molecular beams of disilane, Si2H6. The resulting thin-film surface topology has been examined using atomic force microscopy. Rough surface morphology is observed as the beam angle of incidence is increased above ∼60°. Thin films deposited at substrate temperatures ≤600 °C exhibit anisotropic features, which are elongated in a direction perpendicular to the incident beam. Increasing the substrate temperature leads to films with increased root-mean-square roughness and larger characteristic features, maintaining a nearly constant feature aspect ratio. Analysis indicates that the film feature size is controlled by a competition between roughening driven by the shadow instability and smoothening driven by surface mass transport. © 1999 American Institute of Physics.
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