ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100)Si substrates misoriented 4° toward the [110] direction. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 1×107 cm−2, over ten times lower than those of normal two-step MBE-grown or in situ annealed layers. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100212
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