Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2808-2810
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We discuss trends in residual stress as a function of film thickness, growth temperature, and substrate orientation for GaN/AlN/6H–SiC heterostructures. Films are mostly compressive for samples less than about 0.7 μm thick, are tensile up to about 2 μm, then abruptly become less tensile with stress values near 1 kbar thereafter. We interpret this as a successive relief of lattice mismatch and thermal stresses culminating in a catastrophic relief by unknown mechanisms at moderate thicknesses. These data indicate that relaxation processes in these heterostructures are not as well understood as previously supposed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122597
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