ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Single- and multiple-energy Be, S, Si, and Ne ion implantations were performed at room temperature in InSb grown on semi-insulating GaAs substrates. The implanted material was subjected to both isochronal and isothermal annealing schemes. The as-implanted and annealed material was characterized by Hall, secondary ion mass spectrometry, and x-ray rocking curve measurements. The as-implanted material is highly n-type for all implant species used in this study. A maximum p-type activation of 90% and n-type activation of 16% was achieved for Be and S implants, respectively. Be activation depends on the thickness of the InSb layer. No in-diffusion of Be and S was observed even after 500 °C anneal. The Si implant has an amphoteric doping behavior.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348394
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