Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 300-302
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate that the presence of dopant atoms influences the roughness, morphology, and optical mirror properties of III–V semiconductor (110) cleavage surfaces. High concentrations of Te dopant atoms in GaAs lead to macroscopically curvatured (110) cleavage surfaces with high step concentrations. This "glass-like" fracture behavior is explained by the "lattice superdilation phenomenon" induced by high concentrations of Te dopant atoms in GaAs. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125726
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