ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 μm has been observed at low driving current density, e.g., 0.1 A cm−2, and low applied bias, e.g., 3 V, across the collector and emitter. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1356732
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