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  • 1
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    Electrically induced shifts of the GaAs nuclear spin levels (1979)
    American Physical Society
    Details
    Publication Date: 1979-12-01
    Print ISSN: 0163-1829
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society
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    PAPER CURRENT
  • 2
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    Plastic deformation of silicon dendritic web ribbons during the growth (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 70; 314-318
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Directional solidification of silicon in carbon crucibles by an oscillating crucible technique (1982)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.
    Keywords: SOLID-STATE PHYSICS
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Crystal growth for high-efficiency silicon solar cells workshop: Summary (1985)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Proceedings of the 25th Project Integration Meeting; p 123-136
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 5
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    Electrical and Structural Characterization of Web Dendrite Crystals (1985)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.
    Keywords: INORGANIC AND PHYSICAL CHEMISTRY
    Type: Proc. of the Flat-Plate Solar Array Proj. Res. Forum on High-Efficiency Crystalline Silicon Solar Cells; p 279-297
    Format: application/pdf
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  • 6
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    Optical absorption coefficient and minority carrier diffusion length measurements in low-cost silicon solar cell material (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Journal of Applied Physics; 53; Nov. 198
    Format: text
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    NASA TECHNICAL REPORTS
  • 7
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    Characterization of HEM silicon for solar cells (1981)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The Heat Exchanger Method (HEM) is a promising low-cost ingot casting process for material used for solar cells. This is the only method that is capable of casting single crystal ingots with a square cross section using a directional solidification technique. This paper describes the chemical, mechanical and electrical properties of the HEM silicon material as a function of position within the ingot.
    Keywords: ENGINEERING (GENERAL)
    Type: Photovoltaic Specialists Conference; May 12, 1981 - May 15, 1981; Kissimmee, FL
    Format: text
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    NASA TECHNICAL REPORTS
  • 8
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    Oscillating-Crucible Technique for Silicon Growth (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-15938 , NASA Tech Briefs (ISSN 0145-319X); 8; 1; P. 127
    Format: text
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    NASA TECHNICAL REPORTS
  • 9
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    Mechanisms limiting the performance of large grain polycrystalline silicon solar cells (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Solar Energy Conference; Oct 17, 1983 - Oct 21, 1983; Athens; Greece
    Format: text
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    NASA TECHNICAL REPORTS
  • 10
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    Proceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells (1984)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Theoretical and experimental phenomena, applications, and characterization including stress/strain and other problem areas that limit the rate of growth of crystals suitable for processing into efficient, cost-effective solar cells are discussed. Melt spinning, ribbon growth, rapid solidification, laser recrystallization, and ignot growth of silicon and metals are also discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-173746 , JPL-PUB-84-23 , DOE/JPL-1012-95 , NAS 1.26:173746 , DE84-014619 , Jul 25, 1983 - Jul 27, 1983; Port St. Lucie, FL; United States
    Format: application/pdf
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