ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Metallorganic chemical vapour deposition (MOCVD) of Cu-In-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato copper mixed with trimethylamine (Cu(hfa)2, NMe3). The other source materials are triethylindium (TEIn), trimethylindium (TMIn) and hydrogen selenide (H2Se). Experimental parameters are detailed and related to the film composition. Properties of thin films are also investigated in the whole range of compositions obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00133116
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