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  • 1
    Electronic Resource
    Electronic Resource
    Diffraction characterization of totally relaxed, partially relaxed, and unrelaxed semiconductor strained-layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5240-5245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffraction from totally relaxed, partially relaxed, and unrelaxed strained-layer superlattices is considered in the light of the similar rocking curves obtained by convergent-beam electron diffraction and x-ray diffraction. Diffraction of the superlattice can be described by an intensity expression given in terms of the strains and thicknesses of the superlattice bilayer. It is shown that the intensity profile of a reflection of a given superlattice depends on the difference of the tensile and compressive strains, i.e., the oscillating strain, of the superlattice bilayer. The oscillating strain of the superlattice bilayer, to a very good approximation, is independent of the state of strain in the step model of the superlattice. The insight gained leads to the understanding and prediction of the general form of the rocking curve of a superlattice from its growth parameters, although simulation of the rocking curve is still needed in order to obtain accurate structural parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352006
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1850-1852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349503
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of A-site cation size mismatch on charge ordering behavior in (La1−xYx)0.5(Ca1−ySry)0.5MnO3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 488-492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron energy-loss spectroscopy (EELS) has been used to determine the valence state of manganese for all the samples at low temperature (93 K). EELS results indicate that the valence state of manganese keeps constant (∼3.5) for all the samples. The effects of the A-site cation size mismatch on the charge ordering (CO) behaviors in the manganites (La1−xYx)0.5(Ca1−ySry)0.5MnO3 are studied by transmission electron microscopy (TEM). TEM images show that the size mismatch and disorder of A-site cations have a suppression effect on the CO transition. The schematic models are proposed for the incommensurate CO modulation in the samples with size mismatch σ2≤0.003. The disappearance of the CO transition in the sample with the largest mismatch (σ2=0.005) is explained by the random arrangements of Mn3+ and Mn4+ ions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376402
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  • 4
    Electronic Resource
    Electronic Resource
    A transmission electron microscopy study of microstructural defects in proton implanted silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4767-4769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: (001) platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363414
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of elastic relaxation in cross-sectional transmission electron microscopy of GexSi1−x/Si strained-layer superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 324-326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of relaxation occur in the cross-sectional transmission electron microscopy samples of the GexSi1−x/Si strained-layer superlattices (SLS) by large-angle convergent-beam electron diffraction (LACBED) and imaging technique which gives a good LACBED pattern superimposed on a high spatial resolution shadow image of the SLS. One type of relaxation occurs between the Si and the GeSi layers. It is negligible in the convergent-beam electron diffraction (CBED) case for the larger value of the ratio of the sample thickness to the SLS wavelength. Another type occurs between the superlattice as an average crystal and the Si substrate. The relaxation of the SLS can be measured by the shift of the Kikuchi line in the SLS from that in the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107925
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  • 6
    Electronic Resource
    Electronic Resource
    Thin film relaxation in cross-sectional transmission electron microscopy specimens of GexSi1−x/Si strained-layer superlattices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2247-2249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-angle convergent-beam electron diffraction (LACBED) pattern with fine diffraction lines from a cross-sectional specimen of GexSi1−x/Si strained-layer superlattices (SLS) can give much information on local strain and misfit stress relaxation. The shift of the diffraction lines in the GeSi layers from those in the Si layers can be used to determine the strain relaxation. A profile of the thin film relaxation versus the specimen thickness is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113181
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  • 7
    Electronic Resource
    Electronic Resource
    Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 846-847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115524
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  • 8
    Electronic Resource
    Electronic Resource
    Void-like defects in annealed Czochralski silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2311-2312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121807
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  • 9
    Electronic Resource
    Electronic Resource
    Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2544-2546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted (001) silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2〈110〉 type. The gettering of oxygen at the nanocavities was demonstrated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121413
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  • 10
    Electronic Resource
    Electronic Resource
    Accurate measurement of phase shift in electron holography (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 771-773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is proposed for the accurate measurement of phase shift in electron holography. The method is based on the use of moiré fringes resulting from the subtraction of a null electron hologram by a real object hologram recorded under slightly different experimental conditions. This method does not require any optical or digital reconstruction of the electron hologram, and is shown to be highly sensitive to the phase shift of the electron wave passing through an object. Using experimental results obtained from a single particle of silicon, we demonstrate that the sensitivity of this method to phase shift may easily be amplified by more than 11 times compared with the conventional method using an ordinary electron hologram. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120888
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