ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The atomic-scale structures and properties of thin films are critically determined by thevarious kinetic processes activated during their atomic assembly. Molecular dynamics simulationsof growth allow these kinetic processes to be realistically addressed at a timescale that is difficult toreach using ab initio calculations. The newest approaches have begun to enable the growthsimulation to be applied for a wide range of materials. Embedded atom method potentials can besuccessfully used to simulate the growth of closely packed metal multilayers. Modified chargetransfer ionic + embedded atom method potentials are transferable between metallic and ionicmaterials and have been used to simulate the growth of metal oxides on metals. New analytical bondorder potentials are now enabling significantly improved molecular dynamics simulations ofsemiconductor growth. Selected simulations are used to demonstrate the insights that can be gainedabout growth processes at surfaces
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3528.pdf
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