Publication Date:
2018-06-06
Description:
The GaInP2/InGaAs/Ge triple junction device lattice matched to germanium has achieved the highest power conversion efficiency and the most commercial success for space applications [1]. What are the practical performance limits of this technology? In this paper we will describe what we consider to be the practical performance limits of the lattice matched GaInP2/InGaAs/Ge triple junction cell. In addition, we discuss the options for next generation space cell performance.
Keywords:
Space Sciences (General)
Type:
Proceedings of the 19th Space Photovoltaic Research and Technology Conference; 145-152; NASA/CP-2007-214494
Format:
application/pdf
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