Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 4975-4987
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The sensitivity of the pseudo Brewster angle cursive-phiB and the reflectivity for p-polarized light at this angle Rp||cursive-phiB to small changes in absorption is used for the identification of deep and shallow defects in semiconductors. Brewster angle spectroscopy (BAS) was performed on undoped and n-type GaAs as well as on undoped and p-type InP. Comparison with literature values shows that BAS can be used to identify deep defects at room temperature without electrical contacting. The changes in the spectra of undoped and doped GaAs and InP can be explained by involving the respective donor and acceptor levels in the transition processes. For CuInS2 the defects are analyzed by measuring Rp close to cursive-phiB as a function of photon energy. The findings can be explained on the basis of existing photoluminescence data, postulating two additional deep levels at hν=Ev+0.350 eV and hν=Ev+0.625 eV. The comparison of model spectra for shallow defects with cursive-phiB spectra of CuInS2 grown with sulphur excess leads to identification of a level at Ev+0.015 eV in accordance with luminescence data on the energetic position of sulphur interstitials. The applicability of BAS is shown, taking into account the experimental limitation through depolarization and angle divergence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353817
Permalink
|
Location |
Call Number |
Expected |
Availability |