Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1722-1724
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermodynamical stability of ultrathin semiconductor layers embedded in isovalent bulk materials has been investigated by ab initio pseudopotential techniques. The AlAs/GaAs and GaAs/GaP structures have been chosen as prototypical examples for this study. We show that independently of the thin layers thickness: (i) At 0 K, the lattice-matched structures are thermodynamically more stable in the ideal configuration than in the case in which some Al and Ga atoms are allowed to diffuse forming a mixed plane; it is the finite-temperature entropy which finally favors the mixed configuration. Conversely, (ii) the lattice-mismatched structures are thermodynamically more stable in the mixed configuration than in the ideal one. In the latter case, it is mainly the chemical mixing and not the relaxation effects which favors diffusion. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123667
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