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  • 1
    Electronic Resource
    Electronic Resource
    Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterization (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6996-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of anodic oxides of crystalline Si in an O2 plasma has been studied. The kinetics are found to follow those expected when neutral O atoms in the plasma capture an electron at the substrate surface and diffuse through the growing oxide under the influence of an applied positive electric field. The oxides have been characterized using infrared spectroscopy, glancing incidence x-ray reflectometry, and electric capacitance/voltage measurements. Shifts to lower wave numbers of the transverse and longitudinal optic infrared modes associated with the asymmetric stretch of the bridging O's with respect to thermally grown oxide values are observed. We conclude that these shifts result from structural modifications induced by ultraviolet photons present in the O plasma. A simple model suggests that the plasma grown oxides have a density ∼3.8% larger than thermal SiO2 and an average Si–O–Si bridging bond angle ∼1.6° smaller. The plasma grown oxides are inhomogeneous in the volume, the bond angle shift increasing to ∼−2.3°, and the density decreasing to +2% with respect to thermal oxide near the Si substrate/SiO2 interface. X-ray reflectivity data, which are consistent with film inhomogeneity, enable us to determine the film thickness and surface (air/SiO2) roughness. The latter is always ≤1 nm. Electrical measurements suggest that the oxides contain fixed oxide charges and interface states which can be reduced by low temperature annealing. The leakage currents remain high, however. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365235
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  • 2
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 3
    Electronic Resource
    Electronic Resource
    O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2302-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profile of oxygen atoms diffused from SiO2 films into Si substrates as interstitials during high temperature annealing has been studied by infrared absorption spectroscopy using 18O as a tracer. The measured absorbance profile in the substrates can be explained in terms of a simple diffusion model in which the SiO2 layer acts as a reservoir of O and there is no energy barrier to diffusion across the Si/SiO2 interface. The driving force for diffusion is the temperature-dependent solubility of oxygen interstitials in the Si. We find evidence both for the outdiffusion of oxygen from the SiO2 layer into the Si during extended annealing and retrodiffusion back into the SiO2 layer during temperature ramp down. From etchback profiling data on O interstitials we are able to revise the Arrhenius law for O diffusion in Si and obtain an activation energy of 2.57 eV and a preexponential factor of 0.22 cm2 s−1. It is further suggested that there is evidence for enhancement of the O diffusion coefficient in Si at low temperatures resulting from the presence of foreign species such as H. These observations are important in understanding the structure of a thermally grown SiO2/Si interface and annealing-induced degradation in Si-based devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361155
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of the vibrational mode spectra of amorphous SiO2 films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4343-4348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral line shapes and the absorption frequencies of the oxygen related infrared active vibrational modes in amorphous SiO2 are studied both experimentally and by simulation. Experimental data were obtained on oxides grown thermally in the temperature range from 800 to 1050 °C and on oxides deposited at 300 °C by plasma enhanced chemical deposition. The transverse optic (TO) mode centered around 1090 cm−1 is found to have a line shape and peak frequency which varies significantly with film thickness while the longitudinal optic (LO) mode at 1256 cm−1 is invariant. Data on both modes and on refractive index is used to demonstrate consistently that the 800 °C grown oxide is 1.6%–2.0% denser than that grown at 1050 °C. For thin oxides (〈10 nm) there is evidence from both TO and LO modes that interfacial oxide is denser than the "bulk.'' The data on deposited oxides suggest that caution must be exercised in extending the analysis to their case. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359459
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  • 5
    Electronic Resource
    Electronic Resource
    Ultraviolet induced defect creation and annihilation in low-temperature-deposited SiO2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5654-5656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous Xe arc and pulsed KrF excimer laser ultraviolet radiation induced modification of the density of oxygen-vacancy defect centers in unannealed, low-temperature-deposited SiO2 has been studied. In lamp-irradiated samples, the density grows from an initial value ∼2×1016 cm−3 to 1017 cm−3. Laser radiation using pulses 40 mJ cm−2 reduces the defect density 6.3×1013 defects cm−3 J−1 cm2 while 200 mJ cm−2 pulses reduce the defect density ∼5.2×1012 defects cm−3 J−1 cm2. Lamp irradiation (EPhoton〈4 eV) transforms existing defect precursors while laser radiation annihilates existing defects by a process of trapping of electrons excited from the valence-band edge. Evidence for new defect creation due to two-photon processes is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343629
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  • 6
    Electronic Resource
    Electronic Resource
    Micropores and the role of ring structures at the Si–SiO2 interface (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 468-470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of nuclear magnetic resonance and photoemission studies on SiO2, SiOx, and the Si–SiO2 interface are combined to examine the role of ring structures in dry oxides. It is demonstrated that the rings, manifesting their presence through charge transfer effects resulting from Si–O–Si bond angle variations, do modify the photoemission spectra. It is further argued that rings, preferentially oriented parallel to the substrate near the SiO2 interface, when stacked up constitute the micropores invoked to explain enhanced O2 diffusion and oxidation rates in thin, dry oxides. The role of OH as a ring inhibitor in wet oxides is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337626
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  • 7
    Electronic Resource
    Electronic Resource
    Thermally activated peroxy radical dissociation and annealing in vitreous SiO2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3368-3372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isochronal and isothermal annealing results for peroxy radical defects induced in Suprasil W1 by γ irradiation are reported. The activation energy for annealing is estimated to be ∼2 eV and argued to be due to OO bond dissociation rather than gaseous interstitial or network diffusion. The results are shown to be consistent with those obtained from annealing/reactivation studies on oxygen vacancy defect centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335800
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  • 8
    Electronic Resource
    Electronic Resource
    Photoinduced fixed oxide charge modification in SiO2 films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1058-1060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of UV irradiation (λ=248 nm) on fixed oxide charges in wet and dry SiO2, with and without postgrowth anneal, is reported. In annealed samples, the density of positive fixed oxide charge increases with accumulated UV dose, more rapidly in dry SiO2 than in wet. In unannealed oxides, the positive fixed oxide charge decreases and becomes negative in wet oxide. Tentative explanations are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336216
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  • 9
    Electronic Resource
    Electronic Resource
    Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 389-393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constants in mixed oxides ZrO2+Y2O3, Ta2O5+TiO2, Ta2O5+Y2O3, and ZrO2+SiO2 are examined in the context of the oxide additivity rule for molecular polarizability. The experimentally observed concentration dependence of the dielectric constant can be satisfactorily explained by taking account of effective molecular polarizability and molecular volume changes. The simple rule thus enables predictive study of the dielectric constant of oxide alloys. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375806
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  • 10
    Electronic Resource
    Electronic Resource
    Comparitive behavior of radiation and thermally generated protons in amorphous SiO2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2246-2250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the transport of thermally and radiation generated protons in amorphous SiO2 gate dielectrics of metal–oxide–semiconductor field effect transistors are compared. I conclude that there is no significant behavioral difference between the two types of protons other than the fact that radiation generated protons transport more dispersively—this may be related to the proton densities involved which are typically more than 50 times smaller. From the inversion channel carrier mobility and subthreshold slope measurements on devices with thermally generated protons I conclude that the interfaces are essentially unpassivated. This observation explains why no proton induced interface state generation is observed in the case of devices containing thermally generated protons. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339206
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