ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this article we report on the Si atomic environment, investigated by near edge x-ray absorption fine structure (NEXAFS) measurements, and on the optical properties of porous silicon samples having different porosity values (30%, 60%, 80%), the sample with the lowest porosity not being luminescent. On the high porosity samples, time resolved photoluminescence measurements have been performed as a function of the temperature in the 10 K≤T≤300 K. The comparison between structural and optical properties shows that the NEXAFS measurements are consistent with the appearance of a large number of passivating Si-H groups on the surface of the highest porosity samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357382
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