ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High-voltage normally-on VJFETs of 0.19 cm2 and 0.096 cm2 areas were manufactured inseven photolithographic levels with no epitaxial regrowth and a single ion implantation event. A selfaligned guard ring structure provided edge termination. At a gate bias of -36 V the 0.096 cm2 VJFETblocks 1980 V, which corresponds to 91% of the 12 μm drift layer’s avalanche breakdown voltagelimit. It outputs 25 A at a forward drain voltage drop of 2 V (368 A/cm2, 735 W/cm2) and a gatecurrent of 4 mA. The specific on-resistance is 5.4 mΩ cm2. The 0.19 cm2 VJFET blocks 1200 V at agate bias of -26 V. It outputs 54 A at a forward drain voltage drop of 2 V (378 A/cm2, 755 W/cm2) anda gate current of 12 mA, with a specific on-resistance of 5.6 mΩ cm2. The VJFETs demonstrated lowgate-to-source leakage currents with sharp onsets of avalanche breakdown
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1047.pdf
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