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  • 1
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/conferenceObject
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  • 2
    Publication Date: 2020-02-12
    Description: From November 1999 through July 2000, a broadband seismic experiment was carried out at Popocatépetl Volcano to record seismic activity over a wide period range (0.04–100 s). We present an overview of the seismicity recorded during this experiment and discuss results of analyses of long-period (LP) and very-long-period (VLP) seismic signals recorded at stations nearest to the crater over a four-month interval December 1999–March 2000. Three families of LP signals (Types-I, II, and III) are identified based on distinctive waveform features observed periods shorter than 1 s, periods longer than 15 s, and within the period range 0.5–2.5 s. Type-I LP events have impulsive first arrivals and exhibit a characteristic harmonic wave train with dominant periods in the 1.4–1.9 s range during the first 10 s of signal. These events are also associated with a remarkable VLP wavelet with period near 30 s. Type-II LP events represent pairs of events occurring in rapid succession and whose signatures are superimposed. These are typically marked by slowly emergent first arrivals and by a characteristic VLP wave train with dominant period near 30 s, made of two successive wavelets whose shapes are quasi-identical to those of the VLP wavelets associated with Type-I events. Type-III LP events represent the most energetic signals observed during our experiment. These have an emergent first arrival and display a harmonic signature with dominant period near 1.1 s. They are dominated by periods in the 0.25–0.35 s band and contain no significant energy at periods longer than 15 s. Hypocentral locations of the three types of LP events obtained from phase picks point to shallow seismic sources clustered at depths shallower than 2 km below the crater floor. Observed variations in volcanic eruptive activity correlate with defined LP families. Most of the observed seismicity consists of Type-I events that occur in association with 1–3-min-long degassing bursts (“exhalations”). Eruptive activity increased in intensity in February, coinciding with an increasing occurrence of Type-II LP events. Type-III events were first observed at the end of February and during March, in coincidence with the formation of a new lava dome. Vulcanian eruptions occurred in April and May. These events typically exhibit broadband signatures extending over the full period range of the sensors and lasting 30–80 min.
    Keywords: 550 - Earth sciences
    Language: English
    Type: info:eu-repo/semantics/article
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5522-5533 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emitted from metal/oxide/metal tunnel junctions can originate from the slow-mode surface plasmon polariton supported in the oxide interface region. The effective radiative decay of this mode is constrained by competition with heavy intrinsic damping and by the need to scatter from very small scale surface roughness; the latter requirement arises from the mode's low phase velocity and the usual momentum conservation condition in the scattering process. Computational analysis of conventional devices shows that the desirable goals of decreased intrinsic damping and increased phase velocity are influenced, in order of priority, by the thickness and dielectric function of the oxide layer, the type of metal chosen for each conducting electrode, and temperature. Realizable devices supporting an optimized slow-mode plasmon polariton are suggested. Essentially these consist of thin metal electrodes separated by a dielectric layer which acts as a very thin (a few nm) electron tunneling barrier but a relatively thick (several 10's of nm) optically lossless region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 224-233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present Raman scattering measurements on a series of [100] short-period AlAsn/GaAsn superlattices. The Raman spectra show evidence for the effects of AlxGa1−xAs layer formation at the heterointerfaces and the experimental spectra are modeled using a random element isodisplacement type model. The model described is based on a rigid-ion lattice dynamic model and involves the construction of a superlattice cell from individual alloy unit cells. The resulting eigenvectors are used to calculate Raman spectra for the samples studied via the bond polarizability model. Comparison between experiment and theory shows near perfect agreement after intermixing effects are included. The effects of interface alloying on selection rules and interface modes are discussed. We also deduce dispersion in the AlAs optic phonon along the [100] direction. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 42 (1950), S. 931-932 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3606-3609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the temperature dependence of the photoluminescence (PL) decay kinetics of a series of GaAs/AlAs quantum-well structures where the GaAs thickness was kept constant at 25 A(ring) and the AlAs was varied between 41 and 19 A(ring). In these structures the band alignment is type II and the dominant photoluminescence process at 4 K is due to recombination of excitons involving electrons confined at the AlAs X point and holes in the GaAs. At 4 K on the low-energy side of the zero-phonon type II transition the PL decay is a single exponential over at least two decades. The time constant of this decay is a strong function of the AlAs layer thickness. The variation of this decay time is described by a change in the oscillator strength of the type II process due to the change in the mixing between the Xz (AlAs) electron states and the Γ (GaAs) electron states. At higher temperatures (T〉15 K) the photoluminescence intensity and the decay time decrease very rapidly with increasing temperature. This is due to the increased influence of nonradiative processes as the type II excitons become delocalized.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6451-6456 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of room temperature photoluminescence spectroscopy and decay time measurements carried out on CdTe/CdS solar cells are reported. The as-grown structures were annealed in air at temperatures in the range 350–550 °C. For excitation via the CdTe/CdS interface, longer photoluminescence decay times were observed as the anneal temperature was increased, this is attributed to localized passivation of nonradiative states possibly due to the effect of S interdiffusion. When the photoluminescence is excited via the CdTe free surface, the decay curves consist of a fast and slow component. The fast component (〈130 ps) of the photoluminescence is attributed to nonradiative recombination at grain boundaries or the CdTe free surface. The slow component is attributed to the effects of carrier drift and diffusion and subsequent recombination at the CdTe/CdS interface. Modeling of the transport process has led to the extraction of a value of 0.20±0.03 cm2 s−1 for the minority carrier diffusion coefficient of the CdTe for the sample annealed at 450 °C. These results are correlated with improvements in device efficiency determined from illuminated current density–voltage measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2555-2561 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report the results of time integrated and time resolved photoluminescence spectroscopy and photoluminescence time decay measurements as a function of excitation density at 6 K on high quality self-organized InAs/GaAs quantum dots. To understand the form of the experimentally observed photoluminescence transients a Monte Carlo model has been developed that allows for the effects of random capture of photo-excited carriers. By comparison with the results of our model we are able to ascribe the excitation density dependence of the overall form of the decay of the emission from the quantum dot ground states and the biexponential nature of the decay of the first excited state emission as being due to the combined effects of radiative recombination, density dependent carrier scattering, and the restriction of carrier scattering due to state blocking caused by the effects of Pauli exclusion. To successfully model the form of the biexponential decay of the highest energy excited states we have to invoke the nonsequential scattering of carriers between the quantum dot states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4208-4212 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The construction and operation of a prism/variable-gap/sample system (or variable-gap Otto coupler) for the excitation of surface electromagnetic modes is reported. This system has been used for the observation and characterization of surface plasmon polaritons on thin film structures. The initial alignment of prism and sample is performed under gravity and the subsequent gap variation is performed by means of a single actuator operating a flexure stage on which the prism is mounted. The flexure stage ensures the maintenance of good parallelism between sample and prism as the gap dimension is varied. The coupler has also served as a prototype, in terms of design principle, for the construction of a more sophisticated, variable-gap Otto coupler that can operate in vacuum at temperatures from ambient to 85 K. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4213-4222 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. © 2000 American Institute of Physics.
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