Publication Date:
2012-08-21
Description:
Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84 Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2 , SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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