Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 5816-5820
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion of ion-implanted Cu in Kapton films has been studied by Rutherford backscattering. At low temperatures, diffusion is thermally activated with an energy of 0.41 eV and a diffusion constant D of about 10−18 cm2/s at room temperature. Above 460 K the implanted profiles narrow dramatically instead of continuing to spread, a process interpreted in terms of cluster nucleation at the polymer's β' transition temperature. Subsequent diffusion of the clusters above 525 K has an activation energy of 1.91 eV. The ion implantation causes discernible surface damage to the polyimide.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343652
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