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  • 1
    Electronic Resource
    Electronic Resource
    Drop formation due to turbulent primary breakup at the free surface of plane liquid wall jets (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 1147-1157 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study of turbulent primary breakup at the free surface of plane liquid wall jets along smooth walls in still air at normal temperature and pressure is described. The study seeks a better understanding of spray formation processes in marine environments, such as in bow sheets. The measurements involved initially nonturbulent annular liquid wall jets, to approximate plane liquid wall jets, with the growth of a turbulent boundary layer along the wall initiated by a trip wire. Pulsed shadowgraphy and holography were used to observe liquid surface properties as well as drop sizes and velocities after turbulent primary breakup. Test conditions included several liquids (water, glycerol mixtures and ethyl alcohol), liquid/gas density ratios of 680–980, wall jet Reynolds numbers of 17 000–840 000 and Weber numbers of 6 100–57 000, at conditions where direct effects of liquid viscosity were small. Measurements included the following: location of the onset of surface roughness, drop size and velocity distributions after breakup, flow properties at the onset of breakup, and mean drop sizes and velocities after breakup. In general, the measurements were correlated successfully based on phenomenological theories. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869639
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  • 2
    Electronic Resource
    Electronic Resource
    Self-mediated growth of single-crystal and entirely (111)-oriented C60 films on alkali halide substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1686-1688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied C60 film growth on alkali halide substrates, KCl (200), KBr (200), and NaCl (200), by using two or three C60 monolayers, which grow at a very low deposition rate, as a self-mediating layer. Continuously and entirely (111)-oriented epitaxial C60 films have been grown in a quite wide temperature range, 40–120 °C, and at very different deposition rates, from 1.5 to 35 Å/min. More over, single-crystal and entirely (111)-oriented C60 films with a grain size of 1–3 μm could be also grown at relative high temperature and low deposition rate, approximately 120 °C and 1.5 Å/min, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123655
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of magnetization time decay in particulate magnetic media (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3446-3446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on magnetization time decay (MTD) data on several commercial and experimental tapes, γ-Fe2O3 (as a function of packing fraction), Co-doped γ-Fe2O3, and CrO2, measured from 2 to 400 K between 1 s and 104 s. We have found that the decay of the magnetization with time, for a given temperature, does not follow a simple log t relation. At each temperature we analyze our data with an empirical model,1 which relates values of coercive field, Hc, obtained with a 60-Hz B-H looper to that measured with a slow VSM field cycle (i.e., over ten orders of magnitude of time). Particular emphasis will be given to the nature of the MTD in these samples when extrapolated to zero temperature. These data will be compared to that previously reported,2 and the role of possible nonthermal mechanisms will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340762
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  • 4
    Electronic Resource
    Electronic Resource
    Vacancy ordering of Ga2Se3 at GaSe/GaAs(100) interface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 966-968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacancy ordering was directly observed by high resolution transmission electron microscopy (HRTEM) at the heterointerface of GaSe/GaAs(100) grown by molecular beam epitaxy. Ga2Se3 crystalline film forms immediately to the GaAs (100) substrate, acting as an intermediate layer with thickness of 1.6–3.2 nm between the GaSe film and the GaAs substrate. Combining with fast Fourier transform analysis and simulations of HRTEM images and diffraction patterns, vacancy ordering in the Ga2Se3 was investigated. The vacancies preferably distribute on the (100) crystal planes of α-Ga2Se3 with a zinc-blende structure and the vacancy sheet appears on the planes of each three separated Ga sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122054
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  • 5
    Electronic Resource
    Electronic Resource
    Link-up of 90° domain boundaries with interface dislocations in BaTiO3/LaAlO3 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3093-3095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface microstructures of BaTiO3/LaAlO3 grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is 〈010〉. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116433
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  • 6
    Electronic Resource
    Electronic Resource
    Lead oxide nanobelts and phase transformation induced by electron beam irradiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 309-311 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-PbO2 nanobelts, with a rectangular cross section, a typical length of 10–200 μm, a width of 50–300 nm, and a width-to-thickness ratio of 5–10, have been successfully synthesized by simple elevated evaporation of commercial PbO powders at high temperature. The PbO2 nanobelts are enclosed by top surfaces ±(201) and side surfaces ±(101¯) and their growth direction is [010]. Each PbO2 nanobelt is found to have a large polyhedral Pb tip at one of its ends, suggesting the growth is dominated by a vapor–liquid–solid mechanism. Electron beam irradiation of the PbO2 nanobelts results in the phase transformation from PbO2 to PbO and finally to Pb. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432749
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  • 7
    Electronic Resource
    Electronic Resource
    Side-by-side silicon carbide–silica biaxial nanowires: Synthesis, structure, and mechanical properties (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50–70 GPa depending on the size of the nanowire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327281
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  • 8
    Electronic Resource
    Electronic Resource
    Structural, optical, and electrical properties of laser deposited FeTiO3 films on C- and A-cut sapphire substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7433-7437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeTiO3 (FTO) thin films were epitaxially grown on two kinds of α-Al2O3 substrates [(0001) and (112¯0)] through pulsed laser deposition under a mixtured gas ambient of 5% oxygen with argon used as the balance. The x-ray diffraction (XRD) and XRD pole figure measurements show parallel growth relationships of the films on these two kinds of substrates, (0006)(parallel)(0006), (112¯0)(parallel)(112¯0), respectively. The interplane XRD pole texture measurement also shows that a parallel relationship exists. Rutherford backscattering spectrometry and Auger electron spectrometry analyses show that the films are stoichiometric and without distinguishable impurities. The optical properties were characterized in the ultraviolet-visible region, and 3.55 eV was obtained for the first time as the band gap of these epitaxial and stoichiometric FTO films. This value in the present high quality films is higher than the band gap reported for bulk material, 2.58 eV. The measurement of the electrical resistance in a quite wide temperature range shows typical semiconductor properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369374
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2603-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSe thin films were grown on a GaAs(100) substrate by molecular beam epitaxy. Microstructures of the thin films and interface were characterized by transmission electron microscopy. The dominant polytype formed in the GaSe thin films was a γ type, which has a 3R-rhombohedral structure with R3m space group. Predominant crystallographic orientation between the GaSe thin films and the GaAs substrate was characterized as: [1¯100]GaSe||[011]GaAs/(0001)GaSe||(100)GaAs. In addition, GaSe thin films with orientation of [1¯21¯0]GaSe||[011]GaAs/(0001)GaSe||(100)GaAs can also grow in some local areas. The interface between GaSe thin films and GaAs substrate constitutes thin intermediate layers of a vacancy ordered β-Ga2Se3, the structure of which inherits the crystallographic features of the GaAs(100) surface. Mechanisms responsible for formation of the preferable crystallographic orientation in the GaSe thin films in the initial growth stage are suggested. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369578
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  • 10
    Electronic Resource
    Electronic Resource
    Covalent Attachment of Peptides to Membranes for Dot-Blot Analysis of Glycosylation Sites and Epitopes
    Amsterdam : Elsevier
    Analytical Biochemistry 211 (1993), S. 179-182 
    Details
    ISSN: 0003-2697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/abio.1993.1253
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