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  • 1
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    Axonopathy and transport deficits early in the pathogenesis of Alzheimer's disease (2005)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2005-02-26
    Description: We identified axonal defects in mouse models of Alzheimer's disease that preceded known disease-related pathology by more than a year; we observed similar axonal defects in the early stages of Alzheimer's disease in humans. Axonal defects consisted of swellings that accumulated abnormal amounts of microtubule-associated and molecular motor proteins, organelles, and vesicles. Impairing axonal transport by reducing the dosage of a kinesin molecular motor protein enhanced the frequency of axonal defects and increased amyloid-beta peptide levels and amyloid deposition. Reductions in microtubule-dependent transport may stimulate proteolytic processing of beta-amyloid precursor protein, resulting in the development of senile plaques and Alzheimer's disease.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Stokin, Gorazd B -- Lillo, Concepcion -- Falzone, Tomas L -- Brusch, Richard G -- Rockenstein, Edward -- Mount, Stephanie L -- Raman, Rema -- Davies, Peter -- Masliah, Eliezer -- Williams, David S -- Goldstein, Lawrence S B -- EY12598/EY/NEI NIH HHS/ -- EY13408/EY/NEI NIH HHS/ -- P50 AG05131/AG/NIA NIH HHS/ -- R01 EY007042/EY/NEI NIH HHS/ -- R01 EY007042-19/EY/NEI NIH HHS/ -- R01 EY013408/EY/NEI NIH HHS/ -- R01 EY013408-02/EY/NEI NIH HHS/ -- New York, N.Y. -- Science. 2005 Feb 25;307(5713):1282-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Howard Hughes Medical Institute and Department of Cellular and Molecular Medicine, School of Medicine, University of California San Diego (UCSD), 9500 Gilman Drive, La Jolla, CA 92093, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15731448" target="_blank"〉PubMed〈/a〉
    Keywords: Aged ; Aged, 80 and over ; Alzheimer Disease/genetics/*metabolism/*pathology ; Amyloid beta-Peptides/metabolism ; Amyloid beta-Protein Precursor/metabolism ; Animals ; *Axonal Transport ; Axons/*pathology/physiology ; Basal Nucleus of Meynert/pathology ; Brain/*metabolism/*pathology ; Cells, Cultured ; Cytoplasmic Vesicles/ultrastructure ; Female ; Hippocampus ; Humans ; Kinesin/metabolism ; Male ; Mice ; Mice, Inbred C3H ; Mice, Inbred C57BL ; Microtubule-Associated Proteins/genetics/metabolism ; Neurons/metabolism ; Organelles/ultrastructure ; Plaque, Amyloid/pathology ; Time Factors
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Photoreceptor membrane shedding and assembly can be initiated locally within an insect retina (1982)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1982-11-26
    Description: Photoreceptors of locust compound eyes add new receptor membrane at dusk and shed membrane at dawn. When part of an eye is masked before dusk, premature assembly of new membrane is initiated in the masked ommatidia but not in the adjacent unmasked ommatidia. Similarly, masking some ommatidia just before dawn prevents normal shedding only in the masked ommatidia. Therefore, the shedding and assembly phases of photoreceptor membrane turnover can be initiated by a change in the state of illumination of individual ommatidia.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Williams, D S -- New York, N.Y. -- Science. 1982 Nov 26;218(4575):898-900.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7134980" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Grasshoppers ; Light ; Morphogenesis ; Periodicity ; Photoreceptor Cells/*physiology ; Retina/*physiology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-12
    Description: The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p -type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
    Electronic Resource
    Electronic Resource
    Silicide formation with codeposited titanium-tantalum alloys on silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1257-1264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of disilicides of titanium and tantalum from Ti-Ta alloys codeposited on silicon and polycrystalline silicon have been investigated using x-ray diffraction techniques, resistance measurements, and Auger electron spectroscopy. Titanium and tantalum in the Ti-Ta alloy interacted independently with silicon. There was no titanium/tantalum compound formation and no ternary was detected. The growth of each metal silicide was sustained by continuous out-diffusion of silicon into the Ti-Ta alloy film until the metals were consumed in the silicide transformation. This behavior may account for the absence of phase separation and component accumulation. An initial reaction was observed after the 600 °C, 30 min anneal. The stable end phases formed at temperatures ≥800 °C are TiSi2 and TaSi2. High molecular weight intermetallics such as Ta5Si3 and Ti5Si3 that are normally not detected in Ta-Si and Ti-Si interaction studies were detected, suggesting a stabilizing effect of the impurities. The sheet resistance of the heat-treated samples is: (a) a strong function of the titanium content of the Ti-Ta alloy (low for Ti-rich alloys); (b) lower on silicon substrates; (c) invariant at temperatures 〉900 °C. The etch rate of the heat-treated samples in buffered hydrofluoric acid increased with increasing titanium content in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339678
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  • 5
    Electronic Resource
    Electronic Resource
    A study of the leakage mechanisms of silicided n+/p junctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1990-1999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Leakage mechanisms for shallow, silicided, n+/p junctions have been investigated. This study consists of two parts: (a) the isolation of the processing steps that cause junction leakage, and (b) the study of the mechanism for a particular process that causes leakage. Reactive ion etching, improper junction, silicide formation procedures, ion mixing, and mechanical stress are found responsible for junction leakage, although through different mechanisms. Two mechanisms have been identified for junction leakage: (a) generation centers in the depletion region caused by deep levels from damage, or from impurities, and (b) Fowler–Nordheim tunneling caused by irregularities at the silicide/silicon interface at high reverse bias. Junction leakage can be avoided by carefully designing the details of silicide and junction formation and by carefully fine-tuning the processing steps to prevent damage of the Si substrate after forming the junction. The best junctions are made by implanting As into CoSi2 and by driving the As into Si from the silicide at 800 °C. The lower temperature drive is possible since all ion damage is contained within the silicide, leaving no damage in the Si substrate to anneal out. Very shallow, silicided, n+/p junctions can be fabricated reproducibly. These junctions demonstrate the same electrical characteristics as deeper, nonsilicided junctions, indicating that there is no fundamental barrier prohibiting fabrication of low-leakage, silicided junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341099
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  • 6
    Electronic Resource
    Electronic Resource
    Application of Localized in VIVO NMR to Whole Organ Physiology in the Animal (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 54 (1992), S. 799-826 
    Details
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ph.54.030192.004055
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of alkali-metal titanium alkoxide compounds MTi(O-iso-Pr)5 (M = Li, Na, K): single crystal x-ray diffraction structure of [LiTi(O-iso-Pr)5]2 (1990)
    s.l. : American Chemical Society
    Inorganic chemistry 29 (1990), S. 4076-4081 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00345a033
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic stiffness and thermal expansion coefficient of boron nitride films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2340-2342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature-dependent stress of boron-nitride (BN) films deposited by low-pressure chemical vapor deposition was measured using an optically leveraged laser apparatus. The measurements were used to calculate values of E/1−ν and α for BN as a function of the NH3/B2H6 ratio. Values of E/1-ν(approximately-equal-to)1×1012 dynes/cm2 and α(approximately-equal-to)5×10−6 °K−1 were obtained independent of the NH3/B2H6 ratio. The intrinsic-stress and the thermal-stress contributions to the room-temperature stress were estimated for different substrates and the values were used to rationalize the strong dependence of the room temperature stress on chemical vapor deposition processing variables.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334341
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  • 9
    Electronic Resource
    Electronic Resource
    Arsenic redistribution during cobalt silicide formation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1340-1346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of arsenic during cobalt silicide formation was studied. For the case of cobalt monosilicide (CoSi) formation, arsenic was implanted initially either into the Co or into the Si substrate and for the case of cobalt disilicide (CoSi2) formation, arsenic was implanted initially into either CoSi or into Si substrate. The distribution profiles of arsenic were monitored before and after heat treatment using Rutherford backscattering spectrometry analysis. The redistribution profiles of arsenic were found to be determined by the kinetics of cobalt silicide formation and by annealing at high temperature. It was found that during the silicide formation the motion of arsenic dopants is in the opposite direction to the dominant diffusing species. The details of the dominant diffusing species in cobalt silicide formation and their relationship to the arsenic dopant redistributions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345687
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  • 10
    Electronic Resource
    Electronic Resource
    Possible Use of Synthetic Surface-active Agents for the Preparation of Tumour Cell Nuclei (1958)
    [s.l.] : Nature Publishing Group
    Nature 182 (1958), S. 529-530 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Suspensions of tumour cells have been prepared from frozen and fresh tumour by light grinding in a porcelain mortar in 5 volumes of 0.15 M saline. The suspensions were filtered successively through No. 80 gauze and 80- and 120-mesh wire screens. The tumour cell suspensions were stirred on ice and ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/182529a0
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