ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Mesa etched, Au/p-InP Schottky diodes with a thin interface layer [metal-thin interface layer-semiconductor (MIS) diodes] were fabricated by evaporation of Au onto a Zn doped epitaxial layer of InP grown by low pressure metalorganic vapor phase epitaxy, on a highly doped InP substrate. The reverse current-voltage (Ir-Vr) and 1 MHz capacitance-voltage (C-V) characteristics of the Au/p-InP MIS diodes were measured in the temperature range 220–393 K. The reverse current in the MIS diodes did not saturate but increased with the increase in the reverse bias voltage. The soft Ir-Vr characteristics of the epitaxial Au/p-InP MIS diodes were very well described by the interface layer thermionic emission theory of Wu [J. Appl. Phys. 51, 3786 (1980)] for reverse bias voltages in the range 0–5 V and over the temperature range 300–393 K. In this temperature range, the values of the zero bias barrier height (φb0) obtained from the analysis of the Ir-Vr/T characteristic using the self-consistent iterative least square fitting method of Tseng and Wu [J. Appl. Phys. 61, 299 (1987)] agreed very well with those obtained from the C-V/T data. The analysis of the Ir-Vr/T data provided the values of (7.5±1.7)×10−3 and (45±22) A(ring) for the transmission coefficient and the thickness of the interface layer, respectively. The capacitance-frequency (C-f) data for frequencies in the range 1 kHz up to 1 MHz and for bias voltages between −0.2 and 4.0 V, justify the assumption of voltage independence of the charge trapped in the states localized at the interface layer, made in the analysis of both the Ir-Vr/T and C-V/T data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357611
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