Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2576-2578
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A technique for the selective growth and patterning of device quality materials has been developed. This technology uses a dielectric-assisted liftoff (DAL) process to pattern molecular beam epitaxy (MBE) grown GaAs into isolated device regions. We have successfully demonstrated the applicability of this dielectric-assisted liftoff process by fabricating power metal-semiconductor field-effect transistor (MESFET) devices with 1, 1.5, and 3 mm gate width geometries. Material and device performance of these DAL patterned MESFETs has been found to be comparable to our standard MBE-grown and mesa isolated MESFET structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103820
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