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  • 1
    Electronic Resource
    Electronic Resource
    Band gaps and lattice parameters of 0.9 μm thick InxGa1−xN films for 0≤x≤0.140 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5190-5194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The c0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick InxGa1−xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c0 lattice parameter followed Vegard's law using c0=0.5185 nm for GaN and c0=0.569 nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation Eg=3.41−7.31x+14.99x2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462851
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  • 2
    Electronic Resource
    Electronic Resource
    Near-field scanning optical nanolithography using amorphous silicon photoresists (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 141-143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field scanning optical microscopy (NSOM) patterning of hydrogenated amorphous silicon (a-Si:H) has been explored. Our sample preparation technique produces films that are stable over several days. The etching process used is highly selective, allowing the unexposed a-Si:H to be completely removed while patterns with line heights equal to the original film thickness remain in exposed regions. We are able to generate patterns with and without the use of light. We have found that the probe dither amplitude greatly affects the linewidth and height of patterns generated without light. We also find that the exposure required for the NSOM to optically generate patterns agrees with threshold dosages determined by far-field exposure studies. Feature sizes of approximately 100 nm, comparable to the probe diameter, were obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122976
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  • 3
    Electronic Resource
    Electronic Resource
    Optical investigations of electron transport through GaAs/AlAs heterostructures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 852-856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of the application of photoresponse techniques to the study of the transport of electrons past an energy barrier. In this study, the barrier was provided by a thin layer of AlAs sandwiched between GaAs layers. The experiment measures the voltage resulting from the flow of optically excited electrons from one side of the barrier to the other. The voltage is measured as a function of the wavelength of the incident light. We present results obtained for samples with different doping levels, AlAs layer widths, and at various temperatures. We find that for increasing temperatures the voltage spectrum shifts to longer wavelengths, and that for higher doping levels in the GaAs the voltage spectrum shifts to shorter wavelengths. We also present the results of calculations which explain why the observed spectra change as a function of temperature and as the doping level in the GaAs is varied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336154
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  • 4
    Electronic Resource
    Electronic Resource
    Stability of visible luminescence from porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2667-2669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109279
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  • 5
    Electronic Resource
    Electronic Resource
    Luminescence degradation in porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 639-641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the stability of the luminescence from porous Si in the presence of a variety of ambient gases (e.g., N2, H2, forming gas, and O2). Although the optical properties are fairly stable under most conditions, illumination in the presence of O2 causes a substantial decrease in luminescence efficiency. Infrared measurements show that the surfaces of degraded samples are oxidized. The luminescence lifetime of the degraded material is found to be substantially reduced, and the density of Si dangling bonds increases by more than two orders of magnitude, which suggests that oxidation of the surface introduces nonradiative recombination channels. These observations indicate that the electronic properties at the surface of the porous Si play a key role in obtaining efficient luminescence from this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106578
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering from H or O terminated porous Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2279-2281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107054
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  • 7
    Electronic Resource
    Electronic Resource
    Photoinduced hydrogen loss from porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1649-1651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we show that UV illumination of porous silicon causes a decrease in its luminescence efficiency. Infrared measurements allow us to associate the efficiency decrease with a loss of hydrogen from the silicon surface. We also find that the rate at which the luminescence intensity degrades increases rapidly when the illumination energy exceeds a threshold near 3.0 eV. We conclude that the decrease in photoluminescence efficiency occurs as a result of optically induced hydrogen desorption and discuss possible explanations for the energy threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108440
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  • 8
    Electronic Resource
    Electronic Resource
    Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3503-3505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a near-field scanning optical microscopy (NSOM) study of S interdiffusion in polycrystalline CdS/CdTe heterojunctions. S diffusion from CdS into CdTe leads to the formation of a CdTe1−xSx ternary phase. Because the band gap of CdTe1−xSx varies with S composition, we were able to combine NSOM with a tunable laser source to microscopically identify S-rich regions in the CdTe layer. S composition was found to be very nonuniform and frequently to be greater along grain boundaries than in the grain centers, identifying grain boundaries as locations of enhanced interdiffusion. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125369
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  • 9
    Electronic Resource
    Electronic Resource
    Spatially resolved derivative spectroscopy of vertical-cavity surface-emitting lasers using near-field scanning optical microscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 929-931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field scanning optical microscope was used in collection mode to generate spatially resolved maps of the first derivative with respect to operating current of power emission from vertical-cavity surface-emitting lasers (VCSELs). This technique is highly sensitive to the formation of new modes and can be used to identify mode cutoff points. An example of the usefulness of this technique is demonstrated as we estimate the index of refraction profile of the VCSEL under study at the single mode cutoff point. This profile is a primary feature of the waveguiding characteristics of such lasers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448861
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  • 10
    Electronic Resource
    Electronic Resource
    Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 100-102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field scanning optical microscopy (NSOM) was used to study cleaved edges of GaAs solar cell devices. Using visible light for excitation, the NSOM acquired spatially resolved traces of the photocurrent response across the various layers in the device. For excitation energies well above the band gap, carrier recombination at the cleaved surface had a strong influence on the photocurrent signal. Decreasing the excitation energy, which increased the optical penetration depth, allowed the effects of surface recombination to be separated from collection by the pn junction. Using this approach, the NSOM measurements directly observed the effects of a buried minority carrier reflector/passivation layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126890
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