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  • 1
    Publication Date: 2011-05-27
    Print ISSN: 1385-2256
    Electronic ISSN: 1573-1618
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Published by Springer
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  • 2
    Publication Date: 1989-01-01
    Print ISSN: 0249-5627
    Electronic ISSN: 1297-9643
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Published by EDP Sciences
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  • 3
    Publication Date: 2023-06-27
    Description: Earth-2 is a collaborative and open-science initiative launched by NVIDIA in Nov 2021, to develop operational digital twins of the Earth and its subsystems. The primary aim of Earth-2 is to improve predictions of extreme weather, projections of climate change, and to accelerate the development of effective mitigation and adaptation strategies - all using advanced modeling and scientifically principled machine learning methods at large scale. An AI centric approach is critical to enable fast and interactive exploration of potential adaptation / mitigation strategies, their consequences, and their trade-offs. Some of the digital twins under development as part of this project include AI surrogates of medium-range weather, global-climate, and seasonal-to-subseasonal forecasting. Other efforts include generative AI downscaling, automatic discovery of physical parameterizations, and generative prediction of precipitation. This talk will discuss the goals, strategies, progress, applications, and future challenges of this effort.
    Language: English
    Type: info:eu-repo/semantics/conferenceObject
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 824-832 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data are presented for the substrate current (holes), which accompanies electron injection into the oxide of n-channel field-effect transistor structures, in the tunneling regime. Dependencies of the effect on oxide thickness and on the metal gate material were investigated. An inverse relation was found between the initial rise time of oxide current transients and both the electron and hole currents. It is shown that these initial current increases are related to positive charge, therefore a correlation exists between the positive charge and electron or hole currents. The strength of impact ionization in SiO2 is discussed on the basis of band-structure arguments and it is concluded that there are difficulties in explaining the substrate current by impact ionization. A technique for fast measurements of capacitance-voltage shifts at the end of an applied high field pulse is described.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 3341-3346 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The 193 nm photodissociation of individual rotational levels of HOD molecules excited with one quantum of O–H or O–D stretching vibrational energy is described. Stimulated Raman excitation and coherent anti-Stokes Raman scattering are used to prepare and detect, respectively, the (0,0,1) (O–H stretch) or (1,0,0) (O–D stretch) vibrationally excited HOD. The OD and OH fragments are detected by laser-induced fluorescence. In the photodissociation of HOD (0,0,1), the yield of both fragments is enhanced [relative to HOD (0,0,0)], but the yield of OD is increased 2.5±0.5 times more than that of OH. In the photodissociation of HOD (1,0,0), no enhancement of the yield of the fragments is obtained. Our results show that even the very lowest possible level of vibrational excitation can be "leveraged'' to effect selective bond breaking. Also, these results demonstrate that bond cleavage does not necessarily occur on the weakened bond and they agree with theoretical calculations indicating that the yield of OD and OH fragments depends on the Franck–Condon overlap of the vibrational wave function with the repulsive surface of the upper state.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2146-2148 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The 193 nm photodissociation of individual rotational levels of HOD molecules excited with one quantum of O–H stretching vibrational energy is described. Stimulated Raman excitation and coherent anti-Stokes Raman scattering are used to prepare and detect, respectively, the (0,0,1) vibrationally excited HOD. The OD and OH fragments are detected by laser induced fluorescence. The photodissociation of the HOD (0,0,1) molecules yields at least three times more OD than OH.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2830-2839 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of a bulk positive charge in SiO2 layers of silicon gate metal-oxide-silicon (MOS) devices, under the conditions of high-field and charge injection is studied. The time dependence of the positive charge and its spatial distribution as a function of the oxide thickness and electric field are all consistent with an impact ionization-recombination model which takes into account both the spatial and the field dependence of the ionization probability. The nature of the ionization, either band-to-band, or traps ionization, is still unknown. Bulk positive charge of the same nature is also formed in Al gate oxides. Nevertheless, it was not always observed in previous works since a much larger Si-SiO2 interfacial positive charge is also generated in these samples.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2024-2035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of enduring charge injection on the physical properties of the SiO2 layer of a metal-oxide-semiconductor structure is studied by means of a novel characterization method. It is based on the observation reported previously, that under charge injection conditions the density of occupied oxide traps reaches a value which is only a fraction of the total trap density. This trap occupation level is strongly dependent on the oxide electric field. The oxide trap density can be evaluated by measuring this field dependence, using a relatively small amount of charge injection. This method is used to distinguish between the process of trap generation and electron trapping in the generated traps, under conditions of continuous charge injection up to levels of more than 50 C/cm2. The trap generation rate is found to be proportional to the flux of the injected charge, and to increase exponentially with the oxide electric field. At high oxide field only a small fraction of the newly generated traps are occupied; consequently, the measured oxide charge buildup does not reflect the actual increase in the density of generated traps. The density of the generated traps reaches high values of the order of 1020 cm−3. It is suggested that these high values of oxide traps may be the cause of the SiO2 "wear out'' type breakdown, by forming a new path of conductance by electron tunneling between closely spaced generated traps.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2252-2261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field and time dependence of charge carriers trapping under different charge injection conditions, is studied in this work, using the dc hot electron injection technique. It is shown that the trapping characteristics converge to field-dependent quasisaturation values. Variation of the trapping levels, due to change of the oxide field magnitude, are obtained in both directions and exhibit complete reversibility. These results, which cannot be explained by the first-order conventional trapping model, are consistent with a dynamic trapping-detrapping model. According to this model, quasisaturation of trapping characteristics is obtained when the trapping and detrapping processes are balanced. The occupation of the traps under steady-state conditions is therefore field dependent. The same model also describes the generation of positive charge under high-field injection conditions. This phenomenon is shown to be related to ionization of localized states in the SiO2 forbidden gap. The implications of the dynamic model suggest the need for a reevaluation of the present characterization methods for trapping in oxide layers.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 706-708 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the electrode impedance can be separated from the bulk impedance in semiconductors and electrochemical cells using high dc biases. This is true both for two-point dc resistance measurements and for two-point ac impedance measurements. Experimental evidence on semiconductor thin films is presented. The dc biases required may be high, in the 50 V range, and can then be applied mainly to high resistance samples, in particular to thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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