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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous in-plane Kerr effects in Fe/GaAs (110) thin films : 35th annual conference on magnetism and magnetic materials San Diego, California (USA) 29 Oct − 1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4997-4999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For many materials that can be magnetized, part of the magnetization process may be attributed to a rotation of the magnetization vector. In this context, a combination of the longitudinal and transverse magneto-optical Kerr effects are used to detect two orthogonal magnetization components in single-crystal Fe/GaAs (110) thin films. Hysteresis curves obtained by this magneto-optical technique are presented for fields along the in-plane [001], [11¯0], and [11¯1] crystal directions. For those curves that show signs of rotation, these data are simulated using a coherent rotation mechanism for the magnetization process and Fresnel reflection coefficients for the two Kerr effects. From the experimental data, it is found that the [11¯1] curves have shapes that are indicative of a rotational process. On the other hand, both the [001] and [11¯0] have magnetization curves that do not follow a simple rotation. From the coherent rotation model, there is qualitative agreement between the modeled and experimental data for the [11¯1].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348177
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  • 2
    Electronic Resource
    Electronic Resource
    Exchange effects in molecular-beam-epitaxy grown iron films : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4523-4525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of molecular-beam-epitaxy iron films grown on (001) GaAs substrates were studied using a SQUID magnetometer. In uncapped films, where there is an oxidized iron layer on top of the film, the M-H loops shift from being symmetric about the origin when the film is cooled in applied fields to temperatures below 100 K. The observed behavior is attributed to a unidirectional exchange anisotropy generated by the antiferromagnetic ordering of the oxidized iron surface. By comparing the magnitude of the exchange coupling observed in these films with that observed in the Co-CoO system, the oxide that forms on the iron surface is most likely FeO. In addition, the magnetic training effect or the effect of cycling through the hysteresis loops at fixed temperatures has been studied. It is noted that the temperature dependence of the measured exchange coupling is different from that which is usually reported. The reason for this difference is unknown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348347
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  • 3
    Electronic Resource
    Electronic Resource
    A rate equation model for the growth of GaN on GaN(0001¯) by molecular beam epitaxy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1219-1226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN(0001¯) films were grown by molecular beam epitaxy using ammonia and elemental Ga. The surface reactivity and growth kinetics of GaN(0001¯) were investigated as a function of growth parameters using desorption mass spectroscopy. Growth proceeds either by island nucleation or by step flow, depending on the steady state surface coverage of Ga. Three Ga adsorption states were found on the surface, one chemisorption and two weak states. One of the weak states corresponds to Ga adsorbed on a gallided surface, while the other corresponded to an intrinsic physisorption state on a hydrogen-passivated, nitrided surface. An abrupt growth mode transition between excess Ga and excess nitrogen was found as a function of growth parameters. The transition was modeled by rate equations based on growth at step edges and the three types of adsorption states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372000
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  • 4
    Electronic Resource
    Electronic Resource
    Identification of the misfit dislocations at an FeAl/AlAs/GaAs interface using moiré fringe contrast in a transmission electron microscope (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 63-65 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Moiré fringe contrast in plan-view transmission electron microscopy (TEM) is adapted to measure the Burgers vector of misfit dislocations at the interface between FeAl and AlAs. This technique had originally been used to determine the Burgers vector of dislocations in bulk materials. The aluminide was grown by molecular beam epitaxy on AlAs which was pseudomorphic on GaAs(001). The observed misfit dislocations are determined to have [100] and [010] Burgers vectors, as measured in the FeAl, with [010] and [100] line directions, respectively. These are pure edge dislocations which cannot glide on the {110} or {112} slip systems of FeAl. This requires that the misfit dislocations either form at the edges of islands, during three dimensional (3D) growth or by climb from the free surface during two-dimensional (2D) growth. The TEM results along with in situ reflection high-energy electron diffraction (RHEED) results show that the growth is indeed 2D which suggests the misfit dislocations must form by dislocation half-loops climbing from the free FeAl surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105523
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  • 5
    Electronic Resource
    Electronic Resource
    Relaxation of strained InGaAs during molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 144-146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation of strained InxGa1−xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent "critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson–Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson–Tsao model for nongrowth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103966
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties of molecular-beam epitaxial grown (100) iron films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3662-3663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of epitaxial iron films have been studied. The iron films were grown on {100} GaAs and GaInAs substrates. Both the magnitude of the anisotropy energies and direction of the easy axes were studied using a SQUID magnetometer. In particular, measurements were made of the magnetization in the plane of the film along the 〈100〉 and 〈110〉 directions. From these measurements the magnitude of the anisotropy energy and the direction of the easy axis were determined. Also measurements of the coercivity of the films were made using a magneto-optic Kerr effect system. These results are compared with those determined previously for iron films grown on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340677
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  • 7
    Electronic Resource
    Electronic Resource
    Substrate modified growth of epitaxial Fe films (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3672-3672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular-beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α-Fe. The growth of the Fe film was characterized by using reflection high-energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe.1
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340681
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of iron based precipitates in GaAs layers grown by molecular-beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2400-2402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers that contain small Fe-based precipitates have been grown using molecular-beam epitaxy. The layers were produced either by codepositing Fe during GaAs growth or by first depositing a thin layer of an Fe-Ga alloy and then growing a capping layer of GaAs. Microstructural characterization of the layers was performed by using transmission electron microscopy. For those samples in which the Fe alloy layer was deposited, the layer disappeared after GaAs growth, leaving behind Fe-containing precipitates distributed throughout the GaAs overlayer. Precipitates were also formed in Fe codeposited samples. The sizes and number densities of the precipitates were dependent on the growth method used, with mean diameters ranging from 21 to 47 nm and number densities from 1013–1015 per cm3. The phase, orientation, and morphology of the particles were also dependent on the growth conditions used, with FeAs and Fe being observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113953
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5° to either the [011] or the [011¯] direction, the transition temperature decreased by approximately 100 °C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108205
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  • 10
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dimethylethylamine alane (DMEAA) has been used to grow AlAs thin films by metalorganic molecular beam epitaxy. In situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements indicate that high-quality AlAs films with atomically smooth surfaces can be epitaxially grown on GaAs(100) at relatively low temperatures (less than 550 °C) with no detectable carbon or oxygen content by AES. Strong oscillations in the specular RHEED intensity indicates a layer-by-layer growth mode of AlAs using this new Al precursor. The growth rate, determined from the period of the intensity oscillations, is linearly dependent on the DMEAA partial pressure, but is independent of substrate temperature, at least in the range from 320 to 620 °C. An enhancement of the Al adatom mobility over that obtained using an elemental Al source was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107086
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