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  • 1
    Electronic Resource
    Electronic Resource
    Combined interface plasmon polariton and x-ray reflectivity determination of the dielectric tensor in ultrathin liquid crystal films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3323-3329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out interface plasmon polariton (IPP) and specular x-ray reflectivity studies of the same multilayer structure containing a thin metallic silver film and a thin (100–600 A(ring)) smectic C* ferroelectric liquid crystal (FLC) film on a glass substrate. An additional thin nylon layer sandwiched between these two films is essential to improve the smectic FLC alignment and its stability. The specular x-ray reflectivity after each stage of layer deposition provides information on the thickness and the electron density of the individual layer. Particularly, this technique allows for the determination of the amplitude and the phase of the electronic density modulation (i.e., the smectic order parameter) of the FLC film. We demonstrate that the x-ray results are essential for the determination of the complex dielectric functions of the FLC film from the shape and the angular position of the IPP resonance. Generally, we have found that for samples with a relatively large smectic order parameter the IPP resonance can be best fitted assuming an anisotropic dielectric tensor and the presence of domains in the FLC film. For well ordered smectic C* films at room temperature, the anisotropy of the dielectric tensor is slightly higher compared to the bulk value and shows a tendency to increase with the decrease of the film thickness in ultrathin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360025
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  • 2
    Electronic Resource
    Electronic Resource
    Fourier transform infrared investigation of the Escherichia coli methionine aporepressor (1987)
    s.l. : American Chemical Society
    Biochemistry 26 (1987), S. 2706-2711 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00384a009
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5778-5781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 μm are characterized. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412574
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 787-789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction (HRXRD) is proposed as a nondestructive tool for the characterization of the silicon on insulator (SOI) film in bonded wafers. Although the bonded stack may consist of many amorphous layers, the measured diffraction spectra only show the crystalline SOI layer, thus providing a direct measurement of the film. We have demonstrated that HRXRD is capable of accurately measuring the film thickness, the tilt of the film planes with respect to the substrate planes, and the rotation misalignment of the bonded film with respect to the carrier substrate. SOI films with thicknesses down to 30 nm were readily measured with accuracy better than 1%. It is shown that an angular separation between the layer and the substrate diffraction peaks is maintained due to an unintentional miscut which usually exists in the starting wafers used for bonding. This angular separation is unique to bonded wafers as opposed to separation by implanted oxygen (SIMOX) wafers where the layer and substrate peaks are nonseparable. Calculated diffraction spectra based on the kinematic approach showed excellent agreement with the measured diffraction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124513
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  • 5
    Electronic Resource
    Electronic Resource
    Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 800-802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9 μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010 cmHz/W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122006
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  • 6
    Electronic Resource
    Electronic Resource
    p- and n-type carbon doping of InxGa1−xAsyP1−y alloys lattice matched to InP (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3793-3795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carbon doping of InxGa1−xAsyP1−y alloys grown by chemical beam epitaxy was studied in the whole range of compositions lattice matched to InP, using carbon–tetrabromide as a source of carbon. The conductivity changed from p- to n-type when going from In0.53Ga0.47As to InP, with a transition point at a composition corresponding to a wavelength of 1.35 μm. The carbon doped n-type quaternaries were found to be very compensated even for compositions close to InP. The p-type quaternaries showed little compensation near the transition point, and almost no compensation for compositions close to In0.53Ga0.47As. Reducing the V/III ratio, while keeping all other growth parameters unchanged, increased the incorporation of the carbon atom, and reduced the compensation for p-type quaternaries. The inversion point position did not change appreciably when the quaternaries were grown with a halved V/III ratio. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116619
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  • 7
    Electronic Resource
    Electronic Resource
    Inverse twisted nematic liquid-crystal device (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3564-3566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we demonstrate an inverse twisted nematic device in which the input polarized light is unaffected in the field-off state and produces a polarization rotation in the field-on state. This is done by using a homeotropically aligned sample containing chiral nematic liquid crystal with negative dielectric anisotropy and specially prepared surfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116638
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  • 8
    Electronic Resource
    Electronic Resource
    Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layers of Ga0.25In0.75P were grown on InP by metalorganic molecular beam epitaxy and studied by ion channeling and asymmetric high-resolution x-ray diffraction. The angular difference between the substrate and the layer channeling angles agreed with the corresponding angular difference calculated from the x-ray results. Negligible relaxation was found in Ga0.25In0.75P layers up to a thickness of 50 nm. Thicker layers were found to be partially relaxed. In the channeling experiments an additional minimum in the substrate angular scan profile at an angle corresponding roughly to the layer's minimum yield was found. This extra minimum was attributed to the steering effect at the strained GaInP/InP interface [S. Hashimoto, Y. Q. Feng, W M. Gibson, L. J. Schowalter, and B. D. Hunt, Nucl. Instrum. Methods B 13, 45 (1986)], and was confirmed by a comparison with the x-ray diffraction measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123127
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  • 9
    Electronic Resource
    Electronic Resource
    FEEDBACK INHIBITION AND REPRESSION OF ASPARTOKINASE ACTIVITY IN ECHERICHIA COLI (1961)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 94 (1961), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1961.tb35587.x
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  • 10
    Electronic Resource
    Electronic Resource
    PARTICLE SIZE DISTRIBUTION IN LA MER SULFUR SOLS (1963)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 67 (1963), S. 2105-2111 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100804a033
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