Electronic Resource
Aina, O.
;
Mattingly, M.
;
Bates, J. R.
;
[et al.]
Coggins, A.
;
O'Connor, J.
;
Shastry, S. K.
;
Salerno, J. P.
;
Davis, A.
;
Lorenzo, J. P.
;
Jones, K. S.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1554-1556
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. The InP layers exhibit residual electron concentration as low as 5×1014 cm−3 and electron mobilities as high as 4000 and 25 000 cm2/V s at 300 and 77 K, respectively. The achieved InP quality is dependent on the GaAs intermediate layer thickness. These excellent electrical properties are due to high crystal qualities as evidenced by x-ray rocking curve half width as low as 215 arcsec and defect densities on the order 108 cm−2. p/n junctions, with ideality factors as low as 1.6 and low leakage currents, confirm the device quality of this material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105245
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