Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 156-158
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray diffraction data prove the epitaxial growth of the CuGaS2 films in the highly ordered chalcopyrite structure. Using photoluminescence, we are able to detect strong excitonic emissions up to room temperature, while photocurrent spectra reveal the A, B, and C valence-to-conduction-band transitions as they are typical for the tetragonal chalcopyrite structure. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1492003
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