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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 on (111)Si inside miniature-size oxide openings by rapid thermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4282-4285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of CoSi2 on (111)Si inside two-dimensional and linear oxide openings by rapid thermal annealing has been investigated by transmission electron microscopy. Both annealing temperature and time were found to be critical in obtaining 100% epitaxy. The size of oxide openings and annealing temperature were found to exert strong influences on the morphology of epitaxial CoSi2 on silicon. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. The change in morphology of epitaxial CoSi2 with the size of oxide openings in the present study indicated that interfacial energy and/or stress, in addition to the surface energy, are important in determining the morphology of epitaxial CoSi2 on (111)Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348400
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  • 2
    Electronic Resource
    Electronic Resource
    Impurities and defects of high-Jc YBa2Cu3Ox superconductor with flux jumps (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7492-7495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of a highly textured bulk YBa2Cu3 (123) superconductor, with the high-transport Jc (≥ (R18)3.7×104 A/cm2 at 77 K) and flux jumps (T〈15 K), were characterized by x-ray diffraction, polarized optical microscopy, scanning electron microscopy, and scanning transmission electron microscopy. It was found that the grains of the 123 superconductor are preferentially oriented along the a-b plane of the 123 phase. The Y2BaCuO5 and CuO particles are dispersed uniformly in the 123 matrix, and the highly dense twins run through the matrix everywhere. Some irregular-shaped BaCuO2-CuO mixtures were observed at the 123 grain boundaries. The aligned 123 crystals and microstructural defects in the 123 matrix are considered to be responsible for the high-Jc value and flux jumps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349746
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  • 3
    Electronic Resource
    Electronic Resource
    In situ formation of Y-Ba-Cu-O epitaxial films by 40.68-MHz rf magnetron sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2731-2733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in situ epitaxial growth of the Y-Ba-Cu-O films on MgO (001) was carried out by 40.68- MHz rf magnetron sputtering with an on-axis single target. It appeared that the rf discharge strongly affected film composition, crystallinity, superconductivity, and reproducibility. Highly orientated superconducting films with the c-axis perpendicular to the substrate surfaces and having zero resistance transition temperature of 78.2 K were obtained without a post-annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348628
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  • 4
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of IrSi3 on (111) and (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1163-1167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to the study of interfacial reactions of iridium thin films on silicon with particular emphasis on the epitaxial growth of IrSi3 on (111) and (001)Si. The formation of precursor phases, IrSi and IrSi1.75, were found to occur mainly in the temperature ranges of 300–500 and 600–900 °C, respectively. The stable IrSi3 was found to grow epitaxially on (111) and (001)Si annealed at 1000–1100 °C. There are three dominant modes of epitaxial IrSi3 on (111)Si and one dominant mode of epitaxial IrSi3 on (001)Si. Interface structures of these different epitaxial modes were determined by diffraction contrast analysis. The quality of IrSi3 epitaxy in terms of the fraction of the silicon surface coverage, size, and the regularity of the interfacial dislocations was found to be the best in (111) samples annealed at 1000 °C. Epitaxial regions of IrSi3, as large as 40 μm in size, were observed on (111)Si. No direct correlation between lattice match and quality of epitaxy could be found. The Burgers vectors of edge-type dislocations for several modes of silicide epitaxy were found to be along the directions with larger lattice mismatches in agreement with a theory by Markov and Milchev [Surf. Sci. 136, 519 (1984)]. A superlattice structure of IrSi3 was found from diffraction pattern analysis. The superlattice structure was determined to be of hexagonal structure and has a unit cell with dimensions three times larger than that reported for IrSi3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340024
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of implantation impurities and substrate crystallinity on the formation of NiSi2 on silicon at 200–280 °C (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2789-2792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influences of implantation impurities, such as BF2, B, F, As and P, as well as silicon substrate crystallinity on the formation of NiSi2 at 200–280 °C in nickel thin films on ion-implanted silicon, have been investigated by transmission electron microscopy. In implantation-amorphous samples no NiSi2 formation was detected at 200–280 °C. The presence of BF2, B, and F atoms was found to promote the epitaxial growth of NiSi2 in nickel thin films on crystalline silicon at low temperatures. Little or no effect on the formation of NiSi2 was found for As+- and P+-implanted samples. The results indicated that the influences of the implantation impurities are not likely to be chemical in origin. The presence of electrically active impurities in crystalline silicon alone was not sufficient to induce the formation of epitaxial NiSi2 at low temperatures. On the other hand, good correlation was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339408
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  • 6
    Electronic Resource
    Electronic Resource
    Local epitaxy of TiSi2 on (111)Si: Effects due to rapid thermal annealing and to the annealing atmosphere (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3172-3175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial TiSi2 was grown on (111)Si by rapid thermal annealing (RTA) in Ar ambient. The best epitaxy was obtained in samples annealed at 1100 °C for 20 s. Almost full coverage of TiSi2 (epitaxial and nonepitaxial) on silicon surface was found. The epitaxial regions, about 20 μm in average size, were observed to cover 70% of the surface area. Some of the epitaxial regions were observed to be as large as 40 μm in size. Dominant mode and average size of TiSi2 epitaxy in RTA samples were found to be different from those in vacuum furnace annealed specimens. Ambient gas induced silicide surface and/or silicide/Si interface energy changes are suggested to promote the growth of differently oriented grains. The main advantages of RTA in inducing TiSi2 epitaxy appear to be better control of the annealing ambient, temperature, and time for short-time anneals in the small RTA apparatus than in a furnace.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337731
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of high Tc superconducting Y-Ba-Cu-O thin films on (001)MgO by a chemical spray pyrolysis method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2523-2526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A chemical spray pyrolysis method has been applied to grow epitaxial films of a high Tc Y-Ba-Cu-O compound (YBCO) on (001)MgO. Films as thin as 0.6 μm in thickness was found to exhibit excellent superconducting transition behavior. For films up to 2 μm in thickness, typical values of Tc onset, Tc zero and transition width (90%–10%) were measured to be 82, 76, and 1.5 K, respectively. Both plan-view and cross-sectional transmission electron microscopy revealed that the orientation relationships between the epitaxial films and the substrate are [001]YBCO//[001]MgO and (110)YBCO//(200)MgO. Twins, which may be perceived as domains that are rotated 90° along the c axis of the thin films with respect to the substrate, were found to be copiously present. The influences of the configuration of the oriented growth of overlayer thin films on the superconducting properties are addressed. The advantages of the chemical spray pyrolysis in producing superconducting thin films are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342497
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing have been studied by scanning and transmission electron microscopy as well as Auger electron spectroscopy. Backsputtering cleaning of the silicon substrates was found to be effective in alleviating the island formation and in promoting the epitaxial growth. Auger depth profiles indicated that intermixing of Ti and Si occurred in samples with substrates cleaned by in situ backsputtering prior to depositions. High-resolution lattice images of cross-sectional samples revealed the presence of continuous amorphous layers between polycrystalline Ti grains and single-crystal Si substrates in the backsputtering-cleaned samples. An amorphous silicon capping layer was found to degrade the surface morphology and hinder the formation of silicide epitaxy. The formation and growth of epitaxial regions are more difficult in samples with amorphous silicon capping layer since an additional step is required for the polycrystalline grains in the upper layer to realign with the underlying epitaxial TiSi2 layer to form an epitaxial region. Better surface morphology is correlated with improved silicide epitaxy with its more favorable energetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340977
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  • 9
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of ReSi2 on (111) and (001) silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 461-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ReSi2 has been grown locally on (111) and (001)Si. The best epitaxy was obtained in samples after two-step annealing at 500–1100 °C. In (111) samples, the orientation relationships were analyzed to be [110]ReSi2//[111]Si and (002)ReSi2//(2¯02)Si. About 70% in areal fraction of the epitaxial regions were found to be pseudomorphic. In (001) samples, two different modes of epitaxial silicides were observed: [110]ReSi2//[001]Si and (1¯10)ReSi2//(22¯0)Si (mode A') and [110]ReSi2//[001]Si and (1¯12¯)ReSi2//(220)Si (mode B'). About 40% and 60% in areal fractions of the mode A' and mode B' epitaxial ReSi2 regions, respectively, were found to be pseudormorphic. The apparent insensitivity of the quality of the ReSi2 epitaxy to the lattice matches at silicide/silicon interfaces at room temperature may be explained in part by the considerable changes in lattice mismatches at the growth temperature arising from the substantial difference in thermal expansion coefficients between the ReSi2 overlayer and the substrate silicon. The results are in agreement with a theory which predicts that orientations with negative mismatches are favored for epitaxial growth over orientations with positive mismatches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339795
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  • 10
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of TaSi2 on (111) and (001)Si by rapid thermal annealing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 879-884 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial TaSi2 was grown on (111) and (001)Si by rapid thermal annealing in Ar ambient. The best epitaxy was obtained in samples annealed at 1300 °C for 300 s. Three major modes and one dominant mode of TaSi2 epitaxy were found to grow on (111) and (001)Si, respectively. The roles of lattice match in the growth of epitaxial TaSi2 are explored. The effects of gas ambient on the growth of TaSi2 epitaxy are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339693
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