Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 1319-1321
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We remove a thin semiconductor film from its growth substrate and reattach it to a nonplanar host substrate. The film is under a large, localized bending stress. In a GaAs/AlGaAs film with a quantum well near one surface where the bending strain is greatest, carriers are laterally confined by the strain to regions where the band gap is red-shifted by up to 62 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107578
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