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  • 1
    Electronic Resource
    Electronic Resource
    The Synthesis of Some Aryl Nitrogen Mustard Derivatives of Estrogens1 (1967)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 10 (1967), S. 255-257 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00314a030
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  • 2
    Electronic Resource
    Electronic Resource
    Linearity and hysteresis in the magnetoresistive response of (NiFe,NiFeCo)/Cu and Co/Cu/NiFe multilayers in patterned stripes : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6379-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linearity and hysteresis in the magnetoresistive (MR) response of NiFe/Cu and NiFeCo/Cu multilayers prepared by ion beam sputtering, and Cu/Co/Cu/NiFe multilayers prepared by MBE are investigated. These characteristics in the linear regions for the second peak of antiferromagnetically coupled NiFe/Cu multilayers are almost the same as those of NiFeCo/Cu ones at 50-Hz ac applied fields. The MR amplitude at the first peak is inferior to that at the second one, whereas, the linearity and hysteresis are superior. In weakly coupled Cu/Co/Cu/NiFe multilayers, a nonhysteretic MR response is obtained at a NiFe layer thickness of 10 A(ring). The linearity and symmetry around the zero magnetic field of the MR curve depend on the Cu layer thickness. When the thicknesses of the NiFe and Cu layers are 10 and 45 A(ring), respectively, good linearity and no hysteresis are observed without biasing techniques. The output levels in the linear regions of three different multilayers are 1.5–2.5 times as large as that of the conventional Permalloy film. These multilayers are promising materials for the fabrication of MR head for ultrahigh density recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355356
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  • 3
    Electronic Resource
    Electronic Resource
    Ruby spectral band-profile analysis for temperature sensing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3599-3606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral band profiles of the E¯→4A2g and 2A¯→4A2g transitions of Cr3+ in Al2O3, i.e., the commonly known ruby 6943 A(ring) (R1) and 6929 A(ring) (R2) emission lines, in the temperature range 10–300 K were recorded and deconvoluted numerically with excellent accuracy into a Lorentzian (homogeneous) component and a Gaussian component. The Gaussian width was taken as arising from sample inhomogeneity and spectrometer slit function, and as expected was found to be independent of temperature. The Lorentzian width was found to vary with temperature in accordance with the two-phonon relaxation processes reported previously, plus a thermal broadening process. While the former processes were quenched completely as temperature was lowered to about 90 K, the latter process, describable with the Debye–Waller factor, still caused a Lorentzian width of about 0.2 cm−1 (for both R1 and R2 lines) which then leveled out quickly to about 0.1 cm−1 as the temperature was lowered further. For temperatures above 100 K, the positions of the R1 and R2 lines were found to have the same temperature dependence as that reported previously. The use of the temperature dependencies of Lorentzian width and line position for temperature sensing was discussed; such an instrument could indeed be made portable because of the simple optical and electronic systems used in our experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356071
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  • 4
    Electronic Resource
    Electronic Resource
    Surface wave scattering at nonuniform fluid interfaces (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 9022-9032 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Effects of spatially varying interfacial parameters on the propagation of surface waves are studied. These variations can arise from inhomogeneities in coverage of surface active substances such as amphiphillic molecules at the fluid/gas interface. Such variations often occur in phase coexistence regions of Langmuir monolayers. Wave scattering from these surface inhomogeneities are calculated in the limit of small variations in the surface parameters by using the asymptotic form of surface Green's functions in the first-order Born approximation. When shear viscosity of the bulk fluid and variations in surface elastic moduli become important, modes other than transverse capillary waves can change the characteristics of propagation. Scattering among these modes provides a mechanism for surface wave attenuation in addition to viscous damping on a homogeneous surfactant covered interface. Experimental detection of waves attenuation and scattering is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468030
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  • 5
    Electronic Resource
    Electronic Resource
    A mechanism of interfacial reactions between boron nitride and nickel aluminide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1970-1974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction between boron nitride and nickel aluminide was studied by diffusion bonding at 1000 °C. Samples annealed in air or vacuum yield the same results. The interdiffusion zone is enriched with Al. An ex situ fractured boron nitride interface shows predominantly BN, featured by granular microstructure, and a minor amount of BOx Ny . A very small amount of Al, but no Ni, is detected. On the other hand, the nickel aluminide interface shows three-dimensional Ni clusters embedded in an alumina matrix. Interactions of Ni and Al thin films with boron nitride substrates were studied to clarify the mechanism. Thermodynamic calculations of Gibbs free energy and reaction enthalpy of various possible reactions between boron nitride and nickel aluminide were carried out. The partition of Ni atoms from nickel aluminide is discussed based upon the grain-boundary diffusion of Ni atoms, chemical potential of the diffusion environment, and chemical activities of Ni and Al atoms in the presence of boron nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344334
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice imaging of metastable TiSi2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2275-2279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstucture of metastable C49-TiSi2 was studied by high-resolution transmission electron microscopy in a bilayer thin film of Ti and Si annealed at 700 °C. Large grains (300–400 nm) of C49-TiSi2 phase with high density of stacking faults on (010) planes were observed. A preferred orientation among the C49-TiSi2 grains was identified, and the grains were aligned along the [010] with slight misorientation. The diffraction pattern from the metastable TiSi2 showed continuous streaks superimposed by discrete spots along hk0 reciprocal lattice rows, indicating the presence of polytypism. Lattice imaging of polytypic TiSi2 has been obtained and it showed that the structure is nonperiodic and one dimensionally disordered due to the stacking faults. The finding of metastable TiSi2 associated with polytypism suggests that its structure could be conveniently represented by various stackings of atomic planes along the [010] direction. An atomic model is proposed to explain the origin of polytypism. It is shown that the arrangement of atoms in C49-TiSi2 structure has four equivalent positions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339483
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2722-2726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been recently reported that the redistribution of dopant during titanium silicide formation enhances the grain growth of polycrystalline silicon at a temperature lower than it normally occurs. The mechanism which is responsible for the enhanced grain growth has been proposed to be dopant diffusion induced grain-boundary migration. We have carried out a detailed study to clarify the mechanism. The results show that the effect of phosphorus dopant alone has a small influence on the grain growth of polycrystalline silicon around 900 °C. However, much enhanced grain growth of polycrystalline silicon accompanied by titanium silicide formation was observed at 700 °C in medium doped and heavily doped conditions as compared to those without silicide formation. On the other hand, no enhanced grain growth was observed in lightly doped and undoped situations regardless of titanium silicide formation. By correlating these observations with depth profiling of dopant distribution, it is concluded that the formation of titanium silicide serves as a sink for the out-diffusion of dopant. The out-diffusion of dopant, preferentially through grain boundaries, leads to a reduction of 30%–50% of dopant from the implanted levels. The depletion of dopant induces grain boundaries to migrate, and therefore enhances the grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339423
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  • 8
    Electronic Resource
    Electronic Resource
    Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2375-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalously large grains due to secondary grain growth in the ordered Cu3 Au thin film were observed by annealing the disordered thin film at 250 °C. No secondary grain growth was observed in the films annealed at 300 and 350 °C. The secondary grains have a preferred orientation of 〈111〉. Formation of antiphase domains with sizes larger than the normal grain size was found to accompany the growth of the secondary grains. Transmission electron microscopy showed that the coalescence of ordered grains contributed appreciably to the enlargement of secondary grains and antiphase domains. The driving forces of secondary grain growth and enhanced ordered domain growth are discussed on the basis of surface energy anisotropy and grain boundary migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341669
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  • 9
    Electronic Resource
    Electronic Resource
    Explosive anisotropic grain growth of delta-NiMo by solid-state diffusion (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2642-2644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous, anisotropic grain growth has been observed in delta(δ)-NiMo intermetallic compound during the annealings of Mo/Ni thin-film diffusion couples at 700 and 800 °C. Two layered microstructures showing median-sized, equiaxed grains and large columnar single crystalline grains were generated. The growth direction of the columnar grains was parallel to the direction of Ni diffusion flux. Electron diffraction indicated that both the median-sized and the columnar grains were δ-NiMo. The composition of δ-NiMo was determined to be Ni48-Mo52 (at.%). According to the thickness of reaction-formed δ-NiMo, the apparent interdiffusion coefficient was measured to be about 10−10 cm2/s which is 4 to 5 orders of magnitude greater than literature data. The enhanced diffusion rate in Ni-Mo, and the anomalous anisotropic grain growth of δ-NiMo compound are discussed on the basis of exothermic reactions between Ni and Mo during diffusional intermixing. The enthalpy of the formation of δ-NiMo is calculated and demonstrated to be sufficient to cause melting/solidification of the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104794
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  • 10
    Electronic Resource
    Electronic Resource
    Antimalarial Constituents of Chinese Drug, Ch'ang Shan, Dichroa febrifuga Lour (1948)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 70 (1948), S. 1765-1767 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01185a028
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