Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 2415-2423
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
As part of a general effort to understand the etching of metals in both plasma and chemical systems the etching of platinum foils in an oxygen plasma generated in a flow-type microwave system was studied. It was found that very rapid etching (∼ 6 A(ring)/s) took place even at low power inputs (200 W). The principal plasma parameters, including oxygen atom concentration, ion concentration, and electron temperature, were measured as a function of distance below the microwave coupler. These were correlated to the rate of foil etching, which decreased with increasing distance from the coupler. On the basis of these correlations a simple mechanistic model was formulated. Etching of platinum in an oxygen plasma jet results from the concomitant action of oxygen atoms and high energy electrons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346501
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