Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3987-3989
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Negative photoconductivity is reported in metal–insulator–semiconductor structures containing Si nanocrystals produced by ion implantation and annealing. Under forward bias, the current is reduced when the sample is illuminated with ultraviolet light whilst under reverse bias it is increased. No such change is observed in structures that have not been ion implanted. This effect is explained by charging of nanocrystals in the oxide layer by photoionization of electrons. The positively charged nanocrystals screen the applied bias voltage leading to a reduction in current at a given voltage. This effect, if larger than the current increase caused by the photoexcitation of carriers in the accumulation layer, gives rise to the observed negative photoconductivity. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124245
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