ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm)deposited on n-type 4H-SiC have been investigated. The oxide was annealed in argon gas ambientfor 30 minutes at 650, 750, 850, and 950°C, in order to optimize the oxide properties. Resultsindicated that the oxide is denser with a significant reduction in percentage of porosity as theannealing temperature increases, except for sample annealed at 950°C. The oxide annealed at850°C was having values of refractive index and dielectric constant close to the values reported inthermally grown SiO2 and it has demonstrated the lowest leakage current density and total interfacetrap density. Viscous shear flow effect has been proposed as the main contributor for the reductionof physical properties when the oxide was annealed at 950°C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.811.pdf
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