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  • 1
    Electronic Resource
    Electronic Resource
    Ion-molecule reactions in disilane (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 1184-1189 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100605a010
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance study of Si delta-doped low-temperature GaAs grown by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2124-2127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectroscopy has been used to study the surface electric field of Si delta-doped GaAs grown by molecular beam epitaxy at a low substrate temperature (230 °C). Franz–Keldysh oscillations in the reflectance spectra are observed for samples annealed above 700 °C for 10 min. The deduced surface electric field increases with annealing temperatures and with a decrease in spacer thickness between surface and the delta-doped plane. The evolution of photoreflectance spectra can be explained by the activation of Si donors and Fermi level pinned at surface due to the redistribution of As precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358788
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  • 3
    Electronic Resource
    Electronic Resource
    Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1838-1842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There has been controversy concerning the energy gap of the cubic (zinc-blende) form of the wide-gap semiconductor GaN. Measurements are reported of the band gaps of both hexagonal (wurtzite) and cubic thin films deposited by a modified molecular-beam-epitaxy process on (001) GaAs and GaP substrates. The important difference from conventional MBE lies in the method of supplying nitrogen to the growing film. Here a rf nitrogen plasma source operating at 13 MHz is used. The structure of the films was monitored by x-ray diffraction and controlled by the addition of an As beam which results in growth of the cubic form—otherwise films grow with the hexagonal structure. The band gaps were measured at room temperature by optical reflectivity, as evidenced by the sharp reduction in interference oscillations as the photon energy approached the band edge, and confirmed by the observation of band-edge photoluminescence. The results can be summarized as Eg=3.42±0.02 eV for the hexagonal and 3.22±0.02 eV for the cubic form. The observation of films containing mixed hexagonal and cubic phases, which may have led to earlier errors in band-gap measurements, is also reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360217
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  • 4
    Electronic Resource
    Electronic Resource
    As precipitate redistribution in Si δ-doped low-temperature GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5697-5701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution x-ray diffractometer and transmission electron microscope (TEM) are used to characterize the redistribution of As precipitates in Si δ-doped GaAs grown by molecular-beam epitaxy at low substrate temperature (230 °C). The analysis results indicate that superlattice satellite peaks, as observed for samples annealed at 700–900 °C for 10 min, are attributed to the formation of the GaAs/As superlattice. Also, the intensity of satellite peaks in x-ray rocking curves and TEM observations reveals the varying degree of As precipitates confined on the Si δ-doped planes. Furthermore, the asymmetry of the satellite peaks clearly indicates the lattice expansion and contraction of the annealed low-temperature epitaxial layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357076
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  • 5
    Electronic Resource
    Electronic Resource
    An investigation of magnesium in indium phosphide grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6662-6667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of magnesium as a p-type dopant in the growth of InP by molecular-beam epitaxy (MBE) has been investigated. The growth was performed at substrate temperatures of ≈500 °C under conditions which produced high-quality unintentionally doped InP with 77 K residual electron concentrations of ND−NA ≈2×1015 cm−3 and mobilities up to 42 500 cm2 V−1 s−1. InP grown in an elemental Mg flux under such "optimum'' conditions has electrical properties which are comparable to those of the undoped material. Using low-temperature photoluminescence, the presence of electrically active shallow acceptors due to Mg and C has been detected in the "Mg-doped'' samples, with Mg being the dominant impurity. Mg is also found to be the principal, electrically active shallow acceptor in undoped InP. The activation energies for Mg and C are 40.9 and 44.4±0.3 meV, respectively, in excellent agreement with previously published data for low-dose ion-implanted InP. Secondary electron microscopy studies on the Mg-doped InP show that the concentration of morphological defects increases as the Mg flux is increased, suggesting Mg is responsible for assisting the formation of defects. However, the increase in defect density does not appear to affect either the electrical or the optical properties of the semiconductor. The small concentration of Mg incorporated into InP from an elemental source makes it unsuitable as a p-type dopant in MBE growth under the condition discussed here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342020
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  • 6
    Electronic Resource
    Electronic Resource
    Energy relaxation by hot electrons in n-GaN epilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 973-979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy relaxation rate for hot electrons in n-type GaN epilayers has been measured over the temperature range 1.5–300 K. Several samples grown by molecular-beam epitaxy and having different electron concentrations have been studied. At low electron temperatures (Te〈20 K), the energy relaxation is via acoustic phonon emission. The magnitude and temperature dependence of the energy relaxation are found to be in good agreement with theoretical calculations using appropriate values of the deformation potential and piezoelectric coupling constants and ignoring screening. For Te≥70 K, the dominant mechanism of energy loss is optic phonon emission. For the several samples studied, consistent values of the optic phonon energy and electron-optic phonon relaxation time, 90±4 meV and 5–10 fs, respectively, are measured. The energy agrees well with values obtained by other methods and the relaxation time is consistent with theoretical calculations of the Fröhlich interaction and indicate that hot phonon effects are absent up to 10−8 W/electron dissipation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334642
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  • 7
    Electronic Resource
    Electronic Resource
    A basis set study for the calculation of electronic excitations using Monte Carlo configuration interaction (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 15-22 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A systematic study of basis sets and many-body correlations for the treatment of electronic excitations is presented. Particular emphasis is placed on the highly accurate treatment of transition energies within a computationally tractable scheme. All calculations have been performed using the Monte Carlo configuration interaction method and correlation-consistent basis sets augmented by diffuse functions constructed for the description of anions, and with the inclusion of additional Rydberg functions. The importance of a balanced description of the excited states and the ground state has been emphasized and the resulting electronic transitions have been compared with experimental values. We have found that the aug-cc-pVTZ basis set further augmented with Rydberg functions constitutes a good choice of basis set for which we report electronic excitations in excellent agreement with experiment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328394
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of butyllithium and butylsodium in the presence of alkoxides (1970)
    s.l. : American Chemical Society
    Analytical chemistry 42 (1970), S. 1835-1837 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50160a071
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  • 9
    Electronic Resource
    Electronic Resource
    Impulsive excitation of coherent phonons observed in reflection in bismuth and antimony (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1004-1006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report time domain observations of coherent lattice vibrations in bismuth and antimony. Phonons are impulsively generated, and detected through reflectivity modulation with 70 fs pulses of laser light at 1.98 eV. With this technique, we demonstrate that coherent lattice oscillations can be studied by reflection in opaque materials, but with selection rules which may differ from conventional impulsive stimulated Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104090
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  • 10
    Electronic Resource
    Electronic Resource
    Transfer reactions involving boron. XXIV. Measurement of the kinetics and activation parameters for the hydroboration of tetramethylethylene and measurement of isotope effects in the hydroboration of alkenes (1972)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 94 (1972), S. 6083-6090 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00772a024
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