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  • 1
    Online Resource
    Online Resource
    Protein Phosphorylation and Meat Quality (2020)
    Singapore :Springer Nature Singapore :
    Details
    Keywords: Food science. ; Proteins . ; Food Science. ; Protein Biochemistry.
    Description / Table of Contents: Section 1. Relationship Between Protein Phosphorylation and Meat Quality -- Chapter 1. Protein phosphorylation detection method -- Chapter 2. Protein phosphorylation affects meat color -- Chapter 3. Protein phosphorylation affects meat tenderness -- Chapter 4. Protein phosphorylation affects meat water holding capacity -- Section 2. Mechanism of the Effect of Protein Phosphorylation on Meat Quality -- Chapter 5. Mechanism of the effect of protein phosphorylation on postmortem glycolysis -- Chapter 6. Mechanism of protein phosphorylation affecting myofibril protein degradation -- Chapter 7. Influence mechanism of protein phosphorylation on calpain activity -- Chapter 8. Influence mechanism of protein phosphorylation on myoglobin -- Section 3. Improvement of Meat Quality by Regulating Protein Phosphorylation -- Chapter 9. Effects of temperature on protein phosphorylation -- Chapter 10. Effects of ionic strength on protein phosphorylation -- Chapter 11. Improvement of meat quality by novel technology.
    Abstract: The book focuses on the current research of the relation between protein phosphorylation and meat quality, reviews the influence mechanism of protein phosphorylation on meat quality, and summarizes the improvement of meat quality by regulating protein phosphorylation. It could help to clarify some dilemmas and encourage further research in this field, aiming for effective application of protein phosphorylation in meat quality in the near future. The book is written for researchers and graduate students in the field of meat science, food chemistry and molecular biology etc.
    Type of Medium: Online Resource
    Pages: XIV, 303 p. 147 illus., 15 illus. in color. , online resource.
    Edition: 1st ed. 2020.
    ISBN: 9789811594410
    URL: https://doi.org/10.1007/978-981-15-9441-0
    DOI: 10.1007/978-981-15-9441-0
    DDC: 641.3
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    A Novel Podophyllotoxin-Derived Compound GL331 Is More Potent than Its Congener VP-16 in Killing Refractory Cancer Cells (1999)
    Springer
    Pharmaceutical research 16 (1999), S. 997-1002 
    Details
    ISSN: 1573-904X
    Keywords: GL331 ; VP-16 ; apoptosis ; cytotoxicity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Purpose. GL331 is a new homolog of VP-16, and has demonstrated more efficacious anti-cancer activity in both the in vitro and in vivo lymphoma systems. To extensively explore GL331's clinical value, we furthermore evaluate the cytotoxicity and apoptosis-inducing activity of GL331 in several human cell lines from cancers that are not normally treated with VP-16. Methods. By MTT and clonogenic survival assays, the cytotoxicities of GL331 and VP-16 were evaluated in a variety of cell lines including nasopharyngeal, hepatocellular, gastric, colon, cervical, and neuro-blastoma cancer types. Western blot analysis was performed to detect the MDR-1 level in these cell lines. By Annexin V-staining flow cytometry and detection of DNA ladders, the apoptosis-inducing activities of GL331 and VP-16 were also evaluated. Results. GL331 showed more efficacy than its congener VP-16 in killing cancer cells. The estimated ID50 of GL331 were 2.5 to 17-fold lower than those of VP-16. GL331 possessed more cell-killing activity even in MDR-1-overexpressing cell lines such as HCC36 and SW620. Its higher cytotoxicity could be attributed by the elevated ability to induce apoptotic cell death. Conclusions. GL331's overriding drug resistance and higher cancer cell-killing activity suggest its superiority in clinical cancer therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018971313256
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  • 3
    Electronic Resource
    Electronic Resource
    Vibrational spectroscopy of sodium trioxodinitrate (1981)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 4051-4056 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150626a020
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of a pentacyclic precursor to the Strychnos alkaloids (1990)
    s.l. : American Chemical Society
    The @journal of organic chemistry 55 (1990), S. 1624-1627 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00292a042
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  • 5
    Electronic Resource
    Electronic Resource
    Smectic layer orientation during switching of surface stabilized cells filled with fluorinated ferroelectric liquid crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 664-669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction study of smectic-C* layer orientation in surface stabilized cells filled with fluorinated ferroelectric liquid crystals show chevron layer structure. The chevrons remain unperturbed up to a field of 12.5 × 106 V/m while optical observations suggest uniform switching at low fields, and nucleation and growth mediated switching at high-field strengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351352
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  • 6
    Electronic Resource
    Electronic Resource
    The possibility of x-ray pulse shortening through laser induced ac Stark shift in atoms (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2629-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is suggested that an originally long x-ray pulse may be shortened substantially, or, alternatively, a short sharp dip may be introduced into an originally long x-ray pulse, by passing the x rays through a resonant absorbing medium that is illuminated by an intense ultrashort laser pulse at certain chosen times. The various conditions for this scheme are stated. Neon and xenon gas media are discussed as examples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353080
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  • 7
    Electronic Resource
    Electronic Resource
    Nanophase dispersed SmCo films with high remanence and corrosion resistance (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6128-6130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanophase dispersions of SmCo5 in either an Al or Co matrix have been synthesized by using pulsed laser deposition to deposit the SmCo aggregated grains while simultaneously sputtering either Al or Co. Smooth single phase type hysteresis loops were measured for both types of dispersed systems. SmCo5 plus Al dispersions were made that exhibited room temperature coercivities of 15 kOe with (approximate)5 at. % Al and decreased to 5.7 kOe with 21 at. % Al. The SmCo5 plus Al dispersions were only marginally affected by heating in air for 30 min to 300 °C. It was possible to make SmCo5 plus Co films with loop squareness of (approximate)0.83 and with room temperature coercivity (approximate)10 kOe by using a Co matrix. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372631
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3826-3832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission electron microscope in conjunction with composition analyses. The p-GaN/Ni/Au samples were heat treated at 500 °C in air mainly composed of a mixture of crystalline NiO, Au, and amorphous Ni–Ga–O phases. Small voids adjacent to the p-GaN film were also observed. The as-deposited Au film converted into discontinuous islands containing small amounts of Ni that connect with p-GaN. NiO formed a continuous film at the surface that covers the Au islands and the amorphous Ni–Ga–O phases. Moreover, NiO partially contacts p-GaN as well as Au islands and the amorphous Ni–Ga–O phase. The orientation relationship of the crystalline NiO, Au-rich islands, and p-GaN film was identified as NiO(111)//Au(111¯)//GaN(0002) and NiO[11¯0]//Au[11¯0]//GaN[112¯0]. The results suggested that Ni atoms diffuse through the Au layer onto the surface and react with oxygen to form NiO, whereas Au atoms diffuse towards the inside to form a Au–Ni alloy. The microstructural examination indicated that the crystalline NiO and/or the amorphous Ni–Ga–O phases may significantly affect the low resistance ohmic contact to p-GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371294
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic self-focusing of intense lasers in undercritical plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2974-2979 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variational principle approach to study the anisotropic self-focusing of ultrarelativistic laser beams in the undercritical plasma is performed in this paper. The presence of the anisotropic self-focusing laser intensity profile is viewed as a result of unstabilization of the isotropic profile. The isotropic laser profile is solved and then its stability relative to the anisotropic one is discussed. Numerical results show that parameters of the isotropic profile are important for its possibility of anisotropic unstabilization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370060
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  • 10
    Electronic Resource
    Electronic Resource
    Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2007-2009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of low defect density highly strained InxGa1−xAs/GaAs multiple quantum well (MQW) structures of thicknesses suited for application in spatial light modulator (SLM) devices operating in infrared has been thwarted by the occurrence of strain-induced defects. Exploiting the notion of strain relief at mesa edges, we report here the first realization of very low defect density MQW structures of thickness as high as 2.38 μm at x=0.20. This has opened up the possibility of realizing a variety of reflective and transmissive SLM structures which also fruitfully exploit the transparent nature of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103992
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