ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Deep levels in nitrogen-implanted n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4261-4263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359889
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A simple timer-relay-based system for reciprocating rotation of crucible/seed in crystal growing systems (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2151-2152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple but versatile reciprocating rotation mechanism is described which can be used to rotate crucible and/or crystal in a crystal growing system. It employs commercially available timer relays allowing accurate periods of motion and delay in the rotation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144717
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6430-6433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods have been used to study GaN films grown on α-Al2O3 (0001) substrates by atmospheric pressure metal-organic chemical vapor deposition and low pressure metal-organic chemical vapor deposition. The results show that in the frequency range from 400 to 3500 cm−1 the signal-to-noise ratio of the FTIR grazing incidence measurement is far higher than that of the FTIR transmission measurement. Some new vibrational structures appearing in the former measurement have been discussed. The features around 1460 and 1300 cm−1 are tentatively assigned to scissoring and wagging local vibrational modes of CH2 in GaN, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370148
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical characteristics for solid C60/GaN heterojunctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6935-6937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaN heterojunctions have been fabricated and their electrical properties have been studied. It has been found that the heterojunction is a strongly rectifying contact with a rectification ratio greater than 106 and with an ideality factor close to 1. The current–temperature measurement shows an exponential decrease of current with increasing reciprocal temperature, from which the effective barrier height is determined to be 0.535 eV. The series resistance measured decreases with increasing forward voltage and finally tends to be constant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370499
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Formation and dissolution of microcrystalline graphite in carbon-implanted GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5662-5665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sharp bands at ∼1350 and ∼1600 cm−1 were observed in the Raman spectra of carbon-implanted GaN after postimplantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. The observation of these two bands indicates the formation of microcrystalline graphite in C-implanted GaN. Hall measurements demonstrated that some dispersed C in GaN acted as acceptors and played a role in reducing electron concentration and Hall mobility. The facts that in 1100 °C furnace annealing the intensities of these two Raman peaks decreased rapidly to zero and the resistivity increased by 3 orders of magnitude indicate the dissolution of microcrystalline graphite at this temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290462
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Heterojunctions of solid C70 and crystalline silicon: Rectifying properties and barrier heights (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1683-1685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current–voltage measurements show that both C70/n-Si and C70/p-Si contacts are rectifying but their directions of rectification are opposite to each other. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.23 eV for C70/n-Si and 0.27 eV for C70/p-Si. Relative dielectric constant of solid C70 was determined to be 4.96 through the study of high-frequency capacitance–voltage characteristics for Ti/C70/p-Si structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115056
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2179-2181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 A(ring) thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 A(ring) thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100275
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3557-3559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117244
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dimethylethylamine alane (DMEAA) has been used to grow AlAs thin films by metalorganic molecular beam epitaxy. In situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements indicate that high-quality AlAs films with atomically smooth surfaces can be epitaxially grown on GaAs(100) at relatively low temperatures (less than 550 °C) with no detectable carbon or oxygen content by AES. Strong oscillations in the specular RHEED intensity indicates a layer-by-layer growth mode of AlAs using this new Al precursor. The growth rate, determined from the period of the intensity oscillations, is linearly dependent on the DMEAA partial pressure, but is independent of substrate temperature, at least in the range from 320 to 620 °C. An enhancement of the Al adatom mobility over that obtained using an elemental Al source was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107086
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Cuspidal pit formation during the growth of SixGe1−x strained films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the formation of cuspidal pits during the growth of strained SixGe1−x alloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress-driven surface diffusion associated with a localized initial perturbation of the buffer layer surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114172
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...