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  • 1
    Publication Date: 2017-03-25
    Description: A new species of Proantrusa Tobias, 1998 (Braconidae: Alysiinae: Dacnusini), P. tridentata sp. nov., is described and illustrated from northwestern China (Ningxia). The genus Proantrusa Tobias is newly recorded for China.
    Keywords: taxonomy ; parasitoid ; new record ; Palearctic ; Dacnusini
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
    Format: application/pdf
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  • 2
    Publication Date: 2018-02-12
    Description: Coeliniaspis Fischer, 2010 (Braconidae, Alysiinae, Dacnusini) is recorded from China and Russia for the first time. Coeliniaspis insularis (Tobias, 1998) is reported from China (Fujian), redescribed and illustrated. A key to the species of the genus Coeliniaspis Fischer is added. Coeliniaspis insularis (Tobias, 1998) and C. rufiventris (Tobias, 1998) are new combinations.
    Keywords: taxonomy ; parasitoids ; new combination ; Oriental ; China ; Fujian ; Russia ; Dacnusini ; Coeliniaspis insularis
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
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  • 3
    Publication Date: 2024-01-12
    Description: Coeliniaspis Fischer, 2010 (Braconidae, Alysiinae, Dacnusini) is recorded from China and Russia for the first time. Coeliniaspis insularis (Tobias, 1998) is reported from China (Fujian), redescribed and illustrated. A key to the species of the genus Coeliniaspis Fischer is added. Coeliniaspis insularis (Tobias, 1998) and C. rufiventris (Tobias, 1998) are new combinations.
    Keywords: taxonomy ; parasitoids ; new combination ; Oriental ; China ; Fujian ; Russia ; Dacnusini ; Coeliniaspis insularis
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 4
    Publication Date: 2024-01-12
    Description: A new species of Proantrusa Tobias, 1998 (Braconidae: Alysiinae: Dacnusini), P. tridentata sp. nov., is described and illustrated from northwestern China (Ningxia). The genus Proantrusa Tobias is newly recorded for China.
    Keywords: taxonomy ; parasitoid ; new record ; Palearctic ; Dacnusini
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5191-5195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady state photocarrier grating measurement technique has been used and is shown to be valid for the characterization of steady-state transport properties of minority carriers in undoped improved quality hydrogenated amorphous germanium (a-Ge:H). Deviations from the theoretically predicted behavior of the measurement have been observed on some a-Ge:H samples. At room temperature in a-Ge:H, the ratio of photoconductivity to dark conductivity is less than 1. The high density of thermally generated carrier is observed to affect the measurement by reducing its sensitivity. Whether it is also the cause of the observed deviation will be discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 19 (1986), S. 1528-1530 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1388-1390 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An x-ray diffraction study was carried out on the crystal structure of the high pressure phases of bismuth, Bi III, Bi III', and Bi IV, using high-energy monochromatic synchrotron radiation from the TRISTAN Accumulation Ring (6.5 GeV). Powdered samples were compressed in a cubic-type multianvil press MAX80 at pressures ranging from 3 to 6 GPa. In some compression runs, the sample temperature was raised up to 550 K. It was possible to obtain diffraction patterns containing many diffraction peaks and assign unambiguously indices to them. The crystal structure of Bi III is tetragonal with ten atoms contained in the unit cell. It has been shown that, when pressure is increased across the transition pressure between Bi III and Bi III', no change in the diffraction pattern takes place, indicating that the two phases have the same structure. Bi IV which exists in the high temperature region in the P-T diagram has been shown to have the structure with a monoclinic symmetry and eight atoms in the unit cell. All the structures determined can be regarded as a distorted body-centered-cubic lattice structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 192-197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2182-2184 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline germanium films containing erbium were deposited by thermal evaporation under 0.6 Torr of argon onto crystalline silicon wafer substrates. Weak broad photoluminescence (PL) around 1.5 μm was observed at room temperature. Annealing under 10−7 Torr of vacuum for 3 h at 500 °C produced no change in the PL spectrum. After 1 h oxidation in air at 500 °C the PL intensity increased by an order of magnitude with reduction of the spectral linewidth and appearance of distinct structures, a portion of which is similar to that observed for Er-implanted Si:O. Subsequent increase in oxidation time reduced the PL intensity slightly with no change in the spectral shape. The PL intensity exhibits a sublinear increase with pump power and approaches saturation at 200 mW. Raman spectra before and after anneal are also presented. Annealing increased the average grain size from 5 to 10 nm. The PL spectrum of erbium metal after oxidation in air at 500 °C is quite different from that of these oxidized Ge:Er films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3118-3124 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress measurements of a-Ge:H thin films deposited by rf glow discharge using a large variety of deposition conditions are reported. It was observed that the stress of the films is strongly related to their structure. Tensile films are usually porous or have many defects, while compressive films are usually homogeneous. High quality films are always compressive. A strong correlation of the stress in the films with the unbonded hydrogen concentration was observed, which may explain the origin of the compressive stress. There was no systematic or consistent link between the stress and the bonded hydrogen content or the deposition rate. The thermal expansion coefficient and the elastic constant were determined for high quality films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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