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  • 1
    Electronic Resource
    Electronic Resource
    Activity and diffusivity of oxygen in liquid Ag-Yb1Ba2Cu3 and Tl1Ba2Ca2Cu3 alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5635-5641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the activity and diffusivity of oxygen in liquid Ag-Yb1Ba2Cu3 and Tl1Ba2Ca2Cu3 at 930 and 900 °C, respectively, by a modified coulometric titration method on the galvanic cell: O(underbar) in liquid alloys/yttria stabilized zirconia/air, Pt. The standard Gibbs formation energy and the diffusivity of oxygen in liquid Ag-Yb1Ba2Cu3 alloy for 1/2O2(1 atm)→O(underbar)(1 at. %) are determined to be ΔG=−247.4 kJ/g atom, and D=1.52×10−4 cm2/s. The oxygen solubility Cs in the Ag-Yb1Ba2Cu3 alloy is 0.0913 at. %, a factor of 5.5 higher than that in Yb1Ba2Cu3 alloy. The addition of Ag does not alter the growth mechanism and the oxygen diffusion controls the film growth. The growth speed is enhanced as a result of the enhanced oxygen solubility. ΔG and the diffusion coefficient of oxygen in the Tl1Ba2Ca2Cu3 liquid alloy are −257 kJ/g atom and 1.2×10−4 cm2/s, respectively. The oxygen solubility of the Tl1Ba2Ca2Cu3 alloy at 900 °C is found to be very high at ∼5.74 at. %. All thermodynamic data for oxygen in the precursor alloys are consistent with each other but there is a deviation of activity coefficient with composition for the different alloys from the theoretical model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351963
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6766-6768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 A(ring) thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352479
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  • 3
    Electronic Resource
    Electronic Resource
    Concentration-dependent oxygen diffusion in Tl1Ba2Ca2Cu3 and Ag1Tl2Ba2Ca2Cu3 superconductor precursor alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3511-3513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the growth mechanism in growing superconducting thin films by the liquid-gas-solidification process, oxygen diffusivities in liquid Tl1Ba2Ca2Cu3 and Ag1Tl1Ba2Ca2Cu3 precursor alloys were measured by a modified coulometric titration method. The diffusivities of oxygen are very high of the order of 10−4 to 10−3 cm2/s. The logarithm of oxygen diffusivities is found to be reciprocally proportional to the logarithm of oxygen concentrations. This concentration-dependent oxygen diffusivity phenomenon has not been observed in many metallic liquids investigated previously. An interstitial diffusion mechanism may contribute to the fast oxygen diffusion. The strong bonds between Ba and O atoms are proposed to enhance the configurational structural order and hence to quicken the oxygen diffusion that varies the oxygen concentration in Tl1Ba2Ca2Cu3 and Ag1Tl1Ba2Ca2Cu3 superconductor precursor liquids. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359985
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  • 4
    Electronic Resource
    Electronic Resource
    Processing of a TlBa2Ca2Cu3Oy superconducting film by liquid-gas solidification (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2836-2838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We succeed for the first time in growing a superconducting TlBa2Ca2Cu3Oy film on MgO〈100〉 substrate using a liquid-gas solidification process (LGS). The films are grown in situ; they are deposited by LGS. There is no post-anneal or compensation of Tl applied after the initial deposition. The as-grown film shows a flat and uniform morphology with the c axis perpendicular to the MgO〈100〉. It exhibits a resistant transition onset of 117 K and zero resistance at 103 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104751
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of epitaxial YbBa2Cu3O7 superconductor by liquid-gas-solidification processing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 705-707 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductive films of YbBa2Cu3O7 have been epitaxially grown on SrTiO3 substrate by a novel liquid-gas-solidification process. A layer of metallic YbBa2Cu3 melt was coated on the substrate and in situ oxidized. The oxide films grown on the SrTiO3 (100) substrate are epitaxially oriented in structure with the c axis normal to the plane film. Values of Tc (R=0) of 82 K with a transition width of 1 K have been achieved. The critical current density Jc is typically 105 A/cm2 at 50 K and 104 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100555
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial YbBa2Cu3O7 superconducting films grown by a new liquid-gas-solidification technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the microstructures of epitaxial YbBa2Cu3O7 superconducting films grown on SrTiO3[100] and [110] substrates by a new liquid-gas-solidification processing technique. Films grown on SrTiO3[100] and [110] substrates are epitaxially oriented with [001] and [110] axes normal to the film surface. Twinned domains of ∼200 A(ring) in size are observed in the [001] oriented films. Most defects observed can be attributed to the presence of stacking faults along the c axis. The presence of Cu-O bilayer defects is also observed. Rapid oxygen diffusion in the liquid phase is found to play an important role in the microstructure of the thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100518
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  • 7
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O films by rf magnetron sputtering using single composite targets: Superconducting and structural properties (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc superconducting Y-Ba-Cu-O films have been produced by rf magnetron sputtering using single unreacted composite targets of Y2O3, BaF2, and CuO powders. Transport measurements of the films showed a sharp resistive Tc (R=0) at 89 K and a metallic behavior of resistivity versus temperature. The films show preferred orientations when deposited on single-crystal SrTiO3 substrates (100) or (110) and followed by a post O2 annealing at 825 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99716
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  • 8
    Electronic Resource
    Electronic Resource
    YbBa2Cu3O7 epitaxial films grown by a Ag-enhanced liquid gas solidification process (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 191-193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of Ag addition on the epitaxially grown YbBa2Cu3O7 superconductor on a SrTiO3 (100) substrate by the liquid gas solidification process have been investigated. Ag acts as flux and does not incorporate in the oxide formation. Its addition, however, enhances the transport properties resulting from a reduction in film-substrate interaction. Values of Tc(R=0)=90 K and Jc(77 K, H=0)=3×104 A/cm2 can be achieved reproducibly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102403
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  • 9
    Electronic Resource
    Electronic Resource
    Substitutional site preference in a quasicrystal (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4063-4065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron has been successfully incorporated in the quasicrystal i-Al74Si6Mn20−xFex up to a concentration x=7. A combination of magnetic susceptibility and Mössbauer study establishes the fact that there are at least two "classes'' in Mn sites and that Fe substitutes for only one of them. High-field Mössbauer measurements at 4.2 K show that the substituted iron carries no local moment, while low-temperature susceptibility data indicate that its presence does not perturb the Curie–Weiss amplitude of the sample. The inference is that both magnetic and nonmagnetic Mn sites must be present in the quasicrystal and that iron can substitute only from among the latter. The simplest interpretation would be in terms of two "classes'' on Mn sites (one supporting a local moment, one not), although the possibility of there being more than one class of nonmagnetic site cannot yet be excluded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340548
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  • 10
    Electronic Resource
    Electronic Resource
    Simple Nb metal bonding structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2191-2193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple metallic bonding structure, has been developed consisting of a pure metal Nb and an alloy containing Sn, which can be employed to bond a semiconducting laser device and/or a silicon integrated circuit die to a submount with Au–Sn solder. Differential scanning calorimetry, transmission electron microscopy, and scanning electron microscopy reveal that the Nb layer acts effectively both as an adhesion layer to SiO2 and diamond submounts and as a perfect diffusion barrier against Au–Sn solder. The metallization structure shows no indication of dewetting of the Au–Sn solder. The excellent bonding characters have been attributed to the unique metallurgical properties of Nb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113943
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