Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 9149-9154
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The variation of cobalt silicide film resistivity in response to the operating temperature and current level was investigated. The silicide films were formed on various sizes (1×200 μm or 2×200 μm) of n-type polycrystalline silicon resistors. Two different silicide thicknesses were used: 800 A(ring) and 1200 A(ring). The silicide film resistivity was characterized at various temperatures ranging from 15 °C to 195 °C. At each temperature step, samples were subjected to a sweep of increasing current density, in the range of 1–15 mA for 1 μm and 1–30 mA for 2 μm wide samples, to evaluate the joule-heating effect. The behavior of cobalt silicide was similar to that of titanium silicide where resistivity increases linearly with temperature. Empirical models that can accurately estimate the resistivity and temperature coefficient of resistivity at a certain ambient temperature and operating current level were developed. The models were experimentally verified over a wide range of temperatures and current levels. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362586
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