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  • 1
    Electronic Resource
    Electronic Resource
    Line shapes of strongly radiation-damped nuclear magnetic resonance signals (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 7455-7462 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Line shapes of strongly radiation-damped nuclear magnetic resonance (NMR) signals are theoretically analyzed. Analytical expressions for the radiation-damped signals in the frequency domain are reported for the first time. It is shown that the line shapes are generally dependent on the flip angle θ0 of the excitation pulse. In the range of 0≤θ0〈π, the peak height increases linearly, but the linewidth decreases monotonically with the flip angle. An oscillating feature is predicted for the line shape when θ0(approximately-greater-than)π/2. The theoretical predictions are confirmed by the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465727
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  • 2
    Electronic Resource
    Electronic Resource
    Elastic ^4He + ^4He scattering in the hybrid quark-hadron model
    Amsterdam : Elsevier
    Nuclear Physics, Section A 518 (1990), S. 717-722 
    Details
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(90)90187-Q
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  • 3
    Electronic Resource
    Electronic Resource
    Composite particle scattering in a hybrid quark-hadron model
    Amsterdam : Elsevier
    Nuclear Physics, Section A 496 (1989), S. 729-738 
    Details
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(89)90120-6
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  • 4
    Electronic Resource
    Electronic Resource
    Contribution of Porous Pad to Chemical Mechanical Polishing (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 1133-1138 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Chemical mechanical polishing (CMP) is a widely used technique to achieve high level ofglobal and local planarity required in integrate circuit (IC) areas, which pleas for concentrateresearches. A preliminary wafer-scale flow model for CMP is presented considering the roughnessas well as the porosity and compressibility of the pad. Pressure distributions for three kinds of padroughness: cosine shape, two-scale cosine shape and actual roughness were given with the help ofnumerical simulation by solving the corresponding two-dimensional slurry flow model. Pressurefluctuations and peaks can be seen from the results. The model predictions will be conducive to theremoval rate and mass transport computation. The research is a qualitative one and will pave theway for further explorations of mechanisms of CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1133.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Simulation on Temperature Distribution in Chemical Mechanical Polishing (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 353-358 (Sept. 2007), p. 1671-1674 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Temperature rise has two-edged influences on chemical mechanical polishing (CMP)process: temperature-rise facilitates the chemical activity and the motion of the nano particlescontained in the slurry through which material removal ratio (MRR) is enhanced; to the other side ofthe same coin, however, it will soften the pad surface and subsequently reduce the MRR. Thus theresearch on temperature distribution of CMP process will be conducive to discovering the mechanismof polishing, and acquiring stable MRR and improving surface quality. With the help of theknowledge of tribology, hydrodynamics, and thermodynamics, flow equation considering thetemperature variation in the fine step of CMP process, wherein high surface quality is the mainconcern and usually operates in contact free state, is set up, based on which the temperature field incontact is investigated in detail by taking advantage of the simulation technique, and the heat energyproduction and transition relations are obtained. Due to the slurry used, a small viscous heating effectis acknowledged by simulated results, and the temperature rise is negligible in contact-free flows,which is very conducive to the promotion of the final polished wafer/disk surfaces. The research willsurely shed some lights in the mechanism of CMP and lay a feasible foundation for possible futureutilization
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.1671.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    A Preliminary Model Accounting for the Suction Pressure in CMP Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 353-358 (Sept. 2007), p. 737-741 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) is a widely used technique to achieve high level ofglobal and local planarity required in modern integrate circuit (IC) industries and hard diskmanufacturing process, etc., which pleas for concentrate researches. The main purpose of the presentresearch is in an attempt to express the counterintuitive experimental aftermath: the ‘negative’pressure, i.e., a suction force occurred in conventional commercial CMP process. A preliminary twotiers wafer-scale flow model for CMP is presented considering the roughness as well as the elasticityof the bulk pad substrate. Numerical simulations were conducted to elucidate the contact pressure andflow pressure distributions. The results show that a divergence region appears near the leading edge,which contributes to the suction pressure. A stress-richened area near the edges will give rise to overpolishing. The research aftermaths agree well with the experiments, that validate the proposedanalysis to some extend. This will shed lights on the mechanism of CMP process, which for a longtime is considered as a black art where empirical or semi-empirical data are dependent upon tooptimize the CMP parameters
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.737.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Calculation on Temperature Rise of CMP Process: Roughness Effects Considered (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 1348-1353 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has been widely accepted in modern integratedcircuit (IC) industries and hard disk manufacturing processes, to insure wafer surface with high levelof global and local planarity required. In CMP process, temperature rise has two-edged influences:temperature-rise accelerates the chemical activity and the motion of nano-particles contained in theslurry through which material removal ratio (MRR) is enhanced; the other side of the same coin is,however, that it will soften the pad surface and subsequently reduce the MRR. Furthermore, it isfound that temperature-rise would cause agglomeration of nano-particles, which would cause thewafer surface defect. The net effects of temperature thus should be under investigation with scrutiny.In an attempt to study the temperature variation and influencing rule, in this paper we firstly establishthe flow equation considering pad roughness, coupling the energy equation on the basis ofthermodynamics. Then, by taking numerical simulation which is carried out to give out thetemperature distribution of conventional CMP process. The results show that temperature-rise in theCMP process is very minor. The research will surely shed some lights on the mechanism of CMP andlay a feasible foundation for possible future utilization
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.1348.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Numerical Simulation of Hydrostatic Extruding Cu/Al Bimetal Clad through Equal-Strain Contour Concave Die (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 792-798 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A bimetal composite material is a variant of the typical composite that is composed oftwo materials joined at their interface surface. The advantage of clad material is that thecombination of different properties of materials can satisfy both the need of good mechanicalproperties and the demand of user such as electrical properties simultaneously. This paper isconcerned with the hydrostatic extrusion process of copper-clad aluminum rod. The commerciallyavailable finite element program ANSYS was used to simulate the process of hydrostatic extrusionfor Cu/Al bimetal composite through the equal-strain contour concave dies. The relative slippagebetween the inner and outer metals under the condition of different friction factors is studied, andthe stress-strain distribution in the billet was analyzed. Experiment test was carried out; it wasfound that the experimental result has good agreement with relative slippage from the finite elementanalysis
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.792.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Pad Effects on Slurry Flows in CMP System (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 1222-1227 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) is a widely adopted technique to achieve high levelof global and local planarity required in modern integrate circuit (IC) industries, wherein the padproperties weigh heavily on the final performance. A preliminary two-dimensional wafer-scale flowmodel for CMP is presented considering the roughness, the elasticity, as well as the porosity of thepad. Numerical simulations were conducted to show the slurry flow features’ variations due to padparameters change. The results show that the porosity of the pad is conducive to slurry delivering, andsmall porous parameter will lead to prominent increase of load capability, accounting for largermaterial removal rate (MRR) whilst the elasticity of the pad has a more complex influence. The roughsurface carries additional fluid in the valleys of the polishing pad thereby provide some chemicalreactions. The model will shed lights on the mechanism of CMP process, which is for a long timeconsidered as a difficult circle to square
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.1222.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Tensile Property of Submicrocrystalline Pure Fe Produced by HPT-Straining (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 584-586 (June 2008), p. 597-602 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The microstructure and the mechanical properties of pure Fe after HPT-straining at arotation-speed of 0.2 rpm under a compression pressure of 5 GPa were investigated. The elongatedgrains with 300 nm thick and 600 nm long were observed at r = 1.5 mm away from the disk centerregions after HPT-straining for 5 turns ( εeq = 45). The obtained Vickers microhardness in thesubmicrocrystalline Fe after 5 turns was around Hv 3.6 GPa. The engineering tensile strength andtotal elongation of the HPT-processed Fe for 10 turns were 1.9 GPa and 30 %. These facts suggestthat HPT-straining leads to significant refinement of microstructure and increase in strength withgood ductility
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.584-586.597.pdf
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