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  • 1
    Keywords: Plant physiology. ; Stress (Physiology). ; Plants. ; Microbial ecology. ; Plant Physiology. ; Plant Stress Responses. ; Microbial Ecology.
    Description / Table of Contents: Chapter 1. Genetic and genomic resources of range grasses- status and future prospects -- Chapter 2. Forage genetic resources and scope for allele mining of abiotic stress tolerance -- Chapter 3. Breeding for developing higher productive tree-based forage under stress environments -- Chapter 4. Impact of Climate change on forage crop production with special emphasis on diseases and mitigation strategies through breeding and molecular approaches -- Chapter 5. Effect of nano-priming on maize under normal and stressful environment -- Chapter 6. Oxidative stress and antioxidant defense in mitigating abiotic stresses in forage crops: A physiological and biochemical perspective -- Chapter 7. Forage cropping under climate smart farming: a promising tool to ameliorate salinity threat in soils -- Chapter 8. Forage cultivation under challenging environment -- Chapter 9. Potentials and Opportunities of Agro-forestry Under Climate Change Scenario -- Chapter 10. Climate Change Impact on Forage Characteristics: An Appraisal for Livestock Production -- Chapter 11. Sustainable Use of Paddy Straw as Livestock Feed: A Climate Resilient Approach to Crop Residue Burning -- Chapter 12. Engineering Interventions for Climate Resilient Forage Production -- Chapter 13. Promotion of improved forage crop production technologies: Constraints and strategies with special reference to climate change. .
    Abstract: This edited book is collection of information on molecular interventions needed for climate-resilient forage crops. The main focus is to address the gap in the advanced scientific knowledge for the forage species. Agriculture is extremely vulnerable to climate, and even slight change in climatic factors such as temperature causes tremendous losses in yield potential. Forage crops are crucial in global food security and environmental sustainability and face several environmental challenges in field conditions. However, the research on forage crops is far-off compared to agricultural crops and causes a substantial gap in forage demand and productivity. Further, this gap is directly associated with animal health, reproduction, and productivity. Abiotic stresses mainly affect the plant's crucial processes, ultimately reducing the final yield. The problem of abiotic stresses is more frequent in forage crops as they are growing and cultivated in less productive soil and harsh conditions. This book discusses current aspects of crucial physiological, biochemical and molecular processes in forage crops, which are essential for forage crops improvement. The text's major focus is on the advanced technologies and approaches such as seed priming, bio-fortification, breeding, omics, transgenic and bioengineering of metabolic pathways in unique ways, which helps us develop innovative solutions for forage crops. This book covers all the crucial advance technologies, which help mitigate the abiotic stresses in forage crops. We believe that this book will initiate and introduce the readers to state-of-the-art developments and unique in this field of study. This book is of interest to teachers, researchers, climate change scientists, capacity builders, and policymakers. Also, the book serves as additional reading material for undergraduate and graduate students of agriculture, forestry, ecology, soil science, and environmental sciences. National and international agricultural scientists and policymakers will also find this a worthwhile read.
    Type of Medium: Online Resource
    Pages: XXIV, 236 p. 1 illus. , online resource.
    Edition: 1st ed. 2023.
    ISBN: 9789819918584
    DDC: 571.2
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 288-294 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of Pd2Si based Schottky diodes on both n- and p-type silicon measured over a wide temperature range (52–295 K) have been interpreted on the basis of thermionic emission-diffusion mechanism and the assumption of a Gaussian distribution of barrier heights. It is shown that while the occurrence of a distribution of barrier heights is responsible for the apparent decrease of the zero-bias barrier height (φb0) and nonlinearity in the activation energy plot, the voltage dependence of the standard deviation causes the unusual increase of ideality factor (η) at low temperatures. Also, it is demonstrated that the forward bias shifts the mean barrier height towards the higher side and causes narrowing of the distribution as well. A simple method, involving the use of φb0 vs 1/T data, is suggested to gather evidence for the occurrence of a Gaussian distribution of barrier heights and obtain values of mean barrier height and standard deviation. The experimental results correspond to a mean barrier height of 0.80 V, standard deviation 0.05 V, and ideality factor 1.21 for Pd2Si based Schottky barriers on n-type silicon; these values for p-type silicon are 0.38 V, 0.03 V, and 1.07, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5005-5010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of a Schottky diode are simulated numerically using the thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier heights, with a linear bias dependence of both the mean and standard deviation. The resulting data are analyzed to get insight into the effects of distribution parameters on the barrier height, activation energy plots and the ideality factor over a temperature range 50–300 K. It is shown that with a Gaussian distribution of the barrier heights the system continues to behave like a single Schottky diode of apparently low zero-bias barrier height and a high ideality factor. Its barrier height decreases, activation energy plot becomes non-linear and ideality factor increases with a decrease in temperature. While the distribution parameters are responsible for the abnormal decrease of barrier height, their bias dependences account for the higher ideality factor at low temperatures. Also, the pivotal role played by series resistance in influencing the linearity of the ln(I)–V plots of Schottky diodes with a Gaussian distribution of barrier heights is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 171-178 
    ISSN: 1432-0630
    Keywords: PACS: 72.10; 73.30; 73.40; 73.40.Gk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The forward current–voltage (I–V ) characteristics of Pd2Si/n-Si(100) Schottky barrier diodes are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature range of 52–295 K. The evaluation of the experimental I–V data reveals a decrease of the zero-bias barrier height (φ b0 ) and an increase of the ideality factor (η) with decreasing temperature. Further, the changes in φ b0 and η become quite significant below 148 K. It is demonstrated that the findings cannot be explained on the basis of tunneling, generation–recombination and/or image force lowering. Also, the concepts of flat band barrier height and “T 0-effect” fail to account for the temperature dependence of the barrier parameters. The ln(I s/T  2) vs 1/T plot exhibits nonlinearity below 185 K with the linear portion corresponding to an activation energy of 0.64 eV, a value smaller than the zero-bias barrier height energy (0.735 eV) of Pd2Si/n-Si Schottky diodes. Similarly, the value of the effective Richardson constant A** turns out to be 1.17×104 A m-2 K-2 against the theoretical value of 1.12×106 A m-2 K-2. Finally, it is demonstrated that the observed trends result due to barrier height inhomogeneities prevailing at the interface which, in turn, cause extra current such that the I–V characteristics continue to remain consistent with the TED process even at low temperatures. The inhomogeneities are believed to have a Gaussian distribution with a mean barrier height of 0.80 V and a standard deviation of 0.05 V at zero-bias. Also, the effect of bias is shown to homogenize barrier heights at a slightly higher mean value.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 171-178 
    ISSN: 1432-0630
    Keywords: 72.10 ; 73.30 ; 73.40 ; 73.40.Gk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The forward current-voltage (I–V) characteristics of Pd2Si/n-Si(100) Schottky barrier diodes are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature range of 52-295 K. The evaluation of the experimentalI–V data reveals a decrease of the zero-bias barrier height (ϕ b0) and an increase of the ideality factor (η) with decreasing temperature. Further, the changes in ϕ b0 and η become quite significant below 148 K. It is demonstrated that the findings cannot be explained on the basis of tunneling, generation-recombination and/or image force lowering. Also, the concepts of flat band barrier height and “T 0-effect” fail to account for the temperature dependence of the barrier parameters. The 1n(I s /T 2) vs 1/T plot exhibits nonlinearity below 185 K with the linear portion corresponding to an activat ion energy of 0.64 eV, a value smaller than the zero-bias barrier height energy (0.735 eV) of Pd2Si/n-Si Schottky diodes. Similarly, the value of the effective Richardson constant A** turns out to be 1.17 × 104 A m−2 K−2 against the theoretical value of 1.12 × 106 A m−2 K−2. Finally, it is demonstrated that the observed trends result due to barrier height inhomogeneities prevailing at the interface which, in turn, cause extra current such that theI–V characteristics continue to remain consistent with the TED process even at low temperatures. The inhomogeneities are believed to have a Gaussian distribution with a mean barrier height of 0.80 V and a standard deviation of 0.05 V at zero-bias. Also, the effect of bias is shown to homogenize barrier heights at a slightly higher mean value.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 1997-11-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 7
    Publication Date: 2016-08-01
    Print ISSN: 1293-2558
    Electronic ISSN: 1873-3085
    Topics: Chemistry and Pharmacology , Physics
    Published by Elsevier
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  • 8
    Publication Date: 2009-07-01
    Print ISSN: 0379-6779
    Electronic ISSN: 1879-3290
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 9
    Publication Date: 2013-04-12
    Print ISSN: 0175-7598
    Electronic ISSN: 1432-0614
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Published by Springer
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  • 10
    Publication Date: 1996-07-25
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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