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1

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Relation between barrier height and work function in contacts to selenium (1985)

Champness, C. H. ; Chan, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 4823-4825

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In Se–Tl, Se–Cd, Se–Au, and Se–Te contacts prepared by evaporation on a crystallized selenium layer, Schottky barrier heights were measured from junction capacitance. These were found to decrease systematically with the work function of the contacting metal. From this variation, the density of interface states was estimated to be about 1014 cm−2 eV−1, assuming an interfacial layer thickness of 10 A(ring). The neutral level of the states was estimated to lie close to the valence band edge.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335301

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2

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Xerographic effects of small chlorine additions to amorphous selenium (1995)

Wang, Y. ; Champness, C. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 722-730

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A study has been made of the xerographic properties of amorphous selenium doped with chlorine at concentrations below 100 parts per million (ppm) by weight. The sample consisted, in each case, of an aluminum plate with a thin deposited rf sputtered aluminum oxide film, on which a 50 μm layer of amorphous selenium was deposited by evaporation, at a substrate temperature of 50 °C. It was found that the chlorine decreased the acceptance voltage following corona charging, increased the dark decay rate, and decreased the residual voltage after illumination discharge. The changes were such as to be beneficial xerographically for small additions of chlorine to the selenium in the ppm range. Analysis of the time derivative of the dark decay voltage indicated that depletion discharge was the dominant process in the decrease of dark decay voltage with time and a modified relation was introduced to describe the increase of bulk space-charge density with time, arising from thermal excitation of holes from deep discrete centers in the photoreceptor. This analysis indicated a decrease of the release time of the holes with increase of chlorine content, whereas an observed decrease of single cycle and cycled-up residual voltages with increased chlorine indicated an increase of hole capture time from their relevant trapping centers. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358993

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3

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Anomalous inductive effect in selenium Schottky diodes (1990)

Champness, C. H. ; Clark, W. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1104-1106

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A region of anomalous negative capacitance has been observed with forward bias in Se-Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the impedance that is believed to arise from high-level injection of minority electrons into the bulk selenium.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102581

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4

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Anomalous capacitance in selenium Schottky diodes (1989)

Champness, C. H. ; Pan, J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 2321-2327

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In measurements of capacitance as a function of bias on selenium-metal diodes, an anomalous minimum has been observed at frequencies below about 1 kHz. As the frequency is increased, the minimum disappears. For Se-Bi, Se-Au, Se-Tl, and Se-Mg diodes, prepared by evaporation of the metal on a layer of crystallized selenium, the voltage at which the minimum occurs shifts systematically with the magnitude of the barrier height, as determined from capacitance at reverse-bias and current-voltage characteristics. However, no singularities have been observed in parallel incremental resistance at these particular voltages. A simple equivalent circuit model is proposed, which phenomenologically accounts essentially for the observed facts.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342821

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5

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Nontrap capacitance dispersion in Se-Schottky diodes (1987)

Champness, C. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 917-921

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In Schottky diodes fabricated by evaporating thallium on a layer of crystallized selenium, incremental capacitance and resistance, measured at zero bias, were found to decrease considerably with frequency over the range 100 Hz to 3 MHz. This variation is interpreted in terms of series resistance of the contacts and a layer in the selenium, some 0.4 μm in thickness, near the junction which is depopulated of acceptors.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339700

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6

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Cleavage and Twinning in CuInSe2 Crystals (1997)

Shukri, Z. A. ; Champness, C. H.

Copenhagen : International Union of Crystallography (IUCr)

Acta crystallographica 53 (1997), S. 620-630

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ISSN: 1600-5740

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Chemistry and Pharmacology , Geosciences , Physics

Notes: A study was made of the cleavage and twinning character in single crystals of the chalcopyrite CuInSe2, copper indium diselenide, grown in the laboratory by a vertical Bridgman method. In this material, with a c/a ratio of 2.006, the two main cleavage orientations were found to be {101} and {112} (corresponding to the descriptions {201} and {111}, respectively, in a cubic lattice). The plane identifications were made by measuring angles between adjacent cleaved surfaces and verifying the orientations by X-ray Laue and diffractometry. Cleavage was also found less frequently in a {110} plane, but here microscopic examination of the surface revealed it to consist of ridges in a 〈110〉 direction, where the microplanes on either side of the ridge edge were {112} planes. Twinning in the grown crystals was found, by angle measurements and X-ray diffraction, to occur along {112} planes, which is similar to the result in face-centred cubic, diamond and zinc blende lattices, where they are the corresponding {111} planes.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0108768197004539

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7

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Melt-grown CuInSe2 and photovoltaic cells (1999)

Champness, C. H.

Springer

Journal of materials science 10 (1999), S. 605-622

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ISSN: 1573-482X

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Notes: Abstract The crystal structure, cleavage properties and phase relations of the ternary semiconductor CuInSe2 are first described. Then the growth of monocrystals of this chalcopyrite from the melt, with the elements as starting materials, is reviewed from a historical perspective. The procedures for a preferred Bridgman method of growth are described, which result in centimeter-size crystals within an ingot having uniform composition and conductivity-type. The ingot is also free of adhesion to the synthesizing ampoule and, in addition, is free of voids and microcracks. The electronic properties of CuInSe2 are briefly discussed and photovoltaic cells using p-type monocrystalline absorber substrates are reviewed. Finally, the progress made in thin film polycrystalline CuInSe2 based cells is briefly touched upon.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1023/A:1008945816941

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