Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1662-1664
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1310209
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