ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The growth of silicon dioxide at low temperature in an oxygen plasma is investigated using a simplified electrodeless microwave discharge arrangement. The growth behaviour of the oxide is discussed in terms of plasma parameters. The compositional and electrical characterization of the grown oxide have been made to examine its performance for device applications. The results are compared with earlier observations by other authors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00638025
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