Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2310-2312
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The etch rate of 4H–SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H–SiC substrates. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126329
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