Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 121-123 (Mar. 2007), p. 693-696
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The high-frequency capability of carbon nanotube field-effect transistors is investigated bysimulating the small-signal performance of a device with negative-barrier Schottky contacts for thesource and drain, and with a small, ungated region of nanotube between the end contacts and the edgeof the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour,which leads to a significant bias dependence of the small-signal capacitances and transconductance.This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.693.pdf
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