Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 195-197
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly effective donor doping during metalorganic chemical vapor deposition interdiffused multilayer growth of Hg1−xCdxTe is demonstrated using a novel precursor of iodine, ethyl iodide. It is shown that the doping level can be controlled in the range of 7×1014–2×1018 cm−3 with abrupt profiles and without any memory effect. Activation of the iodine as a singly ionized donor is shown to be near 100% at concentrations 〈1×1017 cm−3. Electron mobilities are ≥1×105 and ≥2×105 cm2/V s at 80 and 20 K, respectively, for concentrations of (1–3)×1015 cm−3 and x values ∼0.22. Auger limited lifetimes of ∼1 μs are observed for these layers at 80 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112669
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