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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2742-2748 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the solid solubility [CsCoSi2(B)] and the lattice diffusion coefficient [DCoSi2(B)] of boron in single-crystalline cobalt disilicide (CoSi2) has been investigated between 450 and 1000 °C. Both CsMCoSi2(B) and DCoSi2(B) are found to be considerably higher than the corresponding quantities in silicon. Using a thermodynamical interpretation, the experimental data show that boron-doped CoSi2 can be described as a regular solution in the dilute limit with an enthalpy of solution of ∼−0.4 eV. The experimental data and theoretical estimates of the excess enthalpy of solution indicate a weak interaction of boron with the silicon and cobalt atoms in CoSi2 suggesting that the boron atoms occupy sites in the CoSi2 lattice with a small contribution to the Gibbs energy of the solution phase. The diffusion data yield a high mobility of the boron atoms with an activation energy of ∼2.0 eV for the lattice diffusion coefficient which is ∼1.0 eV lower than that reported for the self-diffusion of Si(Ge) and Co in CoSi2. Boron is a small atom which can occupy interstitial sites in the relatively opened CaF2 structure of CoSi2, and it is argued that the diffusion of boron may occur via a mixed process where interstitial/substitutional interchange takes place, including trapping and detrapping of the boron atoms. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 28 (1989), S. 1873-1878 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 28 (1989), S. 1879-1883 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3088-3089 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples consisting of multi B delta layers and a single Sb delta layer, grown using molecular beam epitaxy, have been sputter depth profiled using O2+ ions with incidence energy of 8.2 or 3.2 keV. The leading and the trailing edge of the B distributions show an anomalous broadening induced by the sputtering, which apparently increases with ion energy. Similar feature is not observed for the Sb distribution. Incorporation of substitutional C to concentrations ∼1019 cm−3 suppresses the broadening feature almost completely. This anomalous broadening is interpreted as a consequence of injection of Si self-interstitials from the region damaged by the ion bombardment. These interstitials may migrate far beyond the mixing depth and interact with the B dopants, which yields a mixing of the B atoms before the distribution is within the "ordinary" mixing depth. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 58-60 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of much work, the formation of epitaxial CoSi2 from Ti/Co on (100) Si remains something of a mystery. It has been proposed that epitaxy occurs via the formation of an intermediate phase of CoSi with a (311) preferred orientation. In the absence of sufficient information it is impossible to validate or to invalidate the specific original claim. However, one shows that the formation of preferably oriented CoSi is not a necessary condition for the subsequent growth of epitaxial CoSi2. Careful measurements of diffraction intensities reveal the probable, temporary formation of a metastable form of CoSi2, based on a diamond cubic rather than the usual CaF2 structure. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4809-4814 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Broadening of Ge and B tracer profiles in Si during sputter depth profiling, using O2+, Ar+, Kr+, and Cs+ ions, has been accurately described using the diffusion approximation of ion induced atomic mixing. The model allows extraction of a parameter yielding the mixing efficiency as a function of deposited energy per unit length (FD) and ion energy. The mixing parameter exhibits a linear dependence on FD3/2 at ion energies between 3 and 300 keV, which provides strong evidence for a dominating influence of thermal spikes on the mixing process. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 18 (1995), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Chlamydomonas reinhardtü Dangeard, adenine or guanine can be used as the sole nitrogen source for growth by means of an inducible system which is repressed by ammonia. Cells grown on either adenine or guanine were able to take up both purines, although the adenine uptake rate was always about 40% of the guanine uptake rate. Both adenine and guanine were taken up by an inducible system(s) exhibiting hyperbolic kinetics with identical apparent A, values of 3-2 mmol m−3 for adenine and 3-2mmol m−3 for guanine. Adenine and guanine utilization depended on pH, with similar optimal pH values of 7·3 and 7·4, respectively. Adenine and guanine each acted as a competitive inhibitor of the other's uptake, and their utilization was also inhibited by hypoxanthine, xanthine and urate. Inhibition of adenine uptake by guanine and hypoxanthine was competitive, with A′, values of 5·5 and 1. 6 mmol m−3 respectively. Guanine uptake was also inhibited competitively by adenine (K1= 1·3mmol m−3) and hypoxanthine (K1= 3. 3 mmol m−3). Utilization of both adenine and guanine was inhibited by cyanide, azide, 3-(3,4-dichlorophenyl)-1,1-dimethyl urea, 2,4-dinitrophenol and carbonylcyanide m-chlorophenylhydrazone, and was also sensitive to p-hydroxymercuribenzoate and N-ethyl-maleimide. On the basis of these results, taken together, the possibility that adenine and guanine are translocated into Chlamydomonas by a common system is discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 12 (1989), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Under stress conditions (darkness, nitrogen starvation, high ammonium concentrations, glutamine synthetase and glutamate synthase inhibition) glutamate dehydrogenase animating activity levels of Chlamydomonas cells varied inversely to those of glutamine synthetase. Nitrogen and carbon sources also influenced glutamate dehydrogenase levels in Chlamydomonas, the highest values being found in cells cultured mixotrophically with ammonium, under which conditions glutamate dehydrogenase and glutamine synthetase levels were likewise inversely related. These facts, together with the analysis of internal fluctuations of ammonium, 2-oxoglutarate, and the amino acid pool as well as the variations of certain enzymes involved in carbon metabolism indicate that glutamate dehydrogenase animating activity is adaptative, being involved in the maintenance of intracellular levels of L-glutamate when they cannot be maintained by the GS-GOGAT cycle, and probably more connected with carbon than nitrogen metabolism.
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  • 10
    ISSN: 0014-5793
    Keywords: Molybdenum cofactor ; Molybdopterin ; Nitrite reductase ; Xanthine oxidase
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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